SiN deposition at low temperatures using the plasma-enhanced atomic layer (PEALD) process is gaining momentum. A high-quality deposited a lower thermal budget and wet etch rates are desired for front-end-of-line applications in semiconductor industries. In this study, of PEALD investigated by utilizing highly reactive trisilylamine silicon precursor three different reaction partners nitrogen pr...

Abstract High quality recording of neuronal activities and electrical stimulation require neurotechnical implants with appropriate electrode material. Iridium oxide (IrOx) is an excellent choice material due to its biocompatibility, low electrochemical impedance, superior charge injection capacity, corrosion resistance, longevity, stability. Plasma enhanced atomic layer deposition (PE-ALD) a su...

Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique to obtain vertically densealigned carbon nanotubes (CNTs) at lower temperatures than chemical vapor deposition (CVD). In this work, we used magnetron sputtering to deposit iron layer as a catalyst on silicon wafers. After that, radio frequency (rf) assisted PECVD reactor was used to grow CNTs. They were treated with wate...

Please cite the original version: Perros, Alexander & Bosund, Markus & Sajavaara, Timo & Laitinen, Mikko & Sainiemi, Lauri & Huhtio, Teppo & Lipsanen, Harri. 2012. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. Volume 30, Issu...

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