1 Department of Physics, Government P.G. College, Ramnagar, Nainital (Uttarakhand), INDIA. 2 Department of Physics, R.H. Govt. Post Graduate College, Kashipur, U S Nagar (Uttarakhand), INDIA. ______________________________________________________________________________________ Abstract: Role of high temperature pre-annealing at 1000 0 C for shorter duration of 10 h and longer duration of 40 h,...

Room temperature ferromagnetism (RTF) is observed in pure copper oxide (CuO) nanoparticles which were prepared by precipitation method with the post-annealing in air without any ferromagnetic dopant. X-ray photoelectron spectroscopy (XPS) result indicates that the mixture valence states of Cu1+ and Cu2+ ions exist at the surface of the particles. Vacuum annealing enhances the ferromagnetism (FM...

Sampling from a Boltzmann distribution is NP-hard and so requires heuristic approaches. Quantum annealing is one promising candidate. The failure of annealing dynamics to equilibrate on practical time scales is a well understood limitation, but does not always prevent a heuristically useful distribution from being generated. In this paper, we evaluate several methods for determining a useful op...

ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...

ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...

Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and depositi...

The cross-sectional RuO2/SiO2 composite films with different RuO2 and SiO2 and Ru2Si3 thin films, deposited by sputtering on silicon wafers and followed by the post-deposition annealing in the temperature range from 150 to 500 °C, will be investigated by transmission electron microscopy (TEM). The studies will provide important structural information on the as deposited films and their evolutio...

Layer splitting by helium and/or hydrogen implantation and wafer bonding was applied to transfer thin single-crystalline ferroelectric layers onto different substrates. The optimum conditions for achieving blistering/splitting after post-implantation annealing were experimentally obtained for LiNbO3, LaAlO3, SrTiO3 single crystals and PLZT ceramic. Under certain implantation conditions large ar...