Low dimensional structures have come a long way from being mere examples of applied quantum mechanics tv widespread applications in many modem devices and instruments. Quantum well, quantum cascade and quantum dot lasers make use of the very fundamental idea of carrier confinement within dimenswns that match their de Broglie wavelength. Quantum well lasers are used in many modern optoelectronic...

We present a comparative study of numerical simulations and experiments on the spatiotemporal dynamics and emission characteristics of quantum-well and quantum-dot lasers of identical structure. They show that, in the quantum-dot laser, the strong localization of carrier inversion and the small amplitude–phase coupling enable a significant improvement of beam quality compared to quantum-well la...

This paper demonstrates simulation tools for edge-emitting multi quantum well (MQW) lasers. Properties of the strained MQW active region are simulated by eight-band kp calculations. Then, a 2D simulation along the transverse cross section of the device is performed based on a drift-diffusion model, which is self-consistently coupled to heat transport and equations for the optical field. Further...

A comprehensive model for the photon number fluctuations and the current noise in quantum cascade lasers is presented. It is shown that the photon intensity noise in quantum cascade lasers exhibits little amplitude squeezing even when noise in the drive current is suppressed below the shot noise value. This is in contrast to interband semiconductor diode lasers in which the laser intensity nois...

A substantial reduction is reported in the threshold current densities for 1 5 p m wavelength In,Ga,+,As/ In,Ga, .,As, -”P, strained-layer multiple quantum well (SLMQW) lasers over lattice-matched MQW lasers. Threshold current density was found to depend sensitively on the InAs content x and thickness d of the In,Ga, -.As quantum wells. Threshold current densities as low as 370A/cm2 and interna...

Strained InGaAS/AIGaAS quantum well (QW) lasers operating at 0.98 jim are currently of great interest due to their suitability for pumping erbium-doped fiber amplifiers. They are reported to yield a lower noise figure and higher gain coefficient than the 1 .48 jim InGaAsflnP pump lasers as well as 0.8 p.m A1GaAS/GaAS pump lasers. In addition, the InGa.AS/AIGaAS strained QW lasers have lower thr...

In long wavelength quantum well lasers the effective electron temperature (T(e)) is often a strong function of the pump current and hence the T(e) correlates with the carrier concentration n in the active region. On the other hand, the material gain g in the active layer depends on both variables, g=g(n,T(e) ). We discuss a convenient way of analyzing this situation, based on considering the co...

The Auger and radiative combination carrier lifetimes in HgCdTe bulk and quantum-well structures, with band gaps in the wavelength range 2-5 pm, are calculated. The Auger recombination rate in a HgCdTe quantum well (QW) is shown to be significantly smaller than that in bulk material. Threshold current densities of HgCdTe double-heterostructure (DH) and multiquantum-well (MQW) lasers are calcula...