The features of the process growth multilayer heterostructures with InN/InGaN quantum wells (QWs) by method molecular-beam epitaxy nitrogen plasma activation in mode modulated metal fluxes are studied. To compensate for elastic stresses structure, active region was formed form an superlattice matched over average lattice parameter underlying InGaN buffer layer. It has been shown that during rel...

Non-Commutative Geometry (NCG) is considered in the context of a charged particle moving uniform magnetic field. The classical and quantum mechanical treatments are revisited, new marker NCG introduced. This then used to investigate Quantum Walks (QWs). It proven that these walks exhibit at near continuum limit. For purely discrete regime, two illustrative different complexities studied full de...

GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB int...

We investigate current noise of lateral p-n junctions, electrostatically defined in 14 nm–wide HgTe-based quantum wells (QWs) with inverted band structure. Consistent with previous experiments on 8-10 nm QWs, the p-n junctions resistances are close to h/2e, indicating the edge states contribution to transport. Taking into account contacts heating, we find that the observed shot noise is suppres...

We have examined the kinetics of carrier relaxation in three-dimensionally confined GaAs/AlGaAs layers obtained by growth on prepatterned GaAs~001! with time-resolved cathodoluminescence ~CL!. Time-delayed CL spectra at 87 K reveal that ~i! relaxation of hot carriers into the largest 3D confined regions occurs on a time scale of a few hundred ps during the onset of luminescence, and ~ii! the lu...

This thesis reports measurements concerning quantum size effects of single crystalline metallic islands by using low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). Different sample systems are presented in the following chapters. In chapter 2, several aspects of quantum well states (QWS) of Pb ultrathin islands grown on Si(111) substrate are reported. The differential c...

In this work we will introduce quantum dots, wires and wells as nanostructure objects with different dimensionality. We will demonstrate the effect of applied external static electric field on the example of semiconductor quantum wells and the appearance of Stark effect. We will briefly allude to some of the optoelectronic devices using Stark effect. The influence of quantum well concentration ...

In this paper, the 2-state decomposed-type quantum walk (DQW) on a line is introduced as an extension of (QW). The time evolution DQW defined with two different matrices, one assigned to real component, and other imaginary component state. Unlike ordinary QWs, localization spreading phenomenon can coincide in DQWs. Additionally, always be converted corresponding 4-state QW identical probability...

Over the last decade there have been many advances in studies of quantum walks (QWs) including a momentum-space QW recently realized our spinor Bose-Einstein condensate system. This possessed behaviors that generally agreed with theoretical predictions; however, it also showed momentum distributions were not adequately explained by theory. We present model which proves coherent dynamics is suff...

We have examined in detail the optical properties and carrier capture dynamics of coupled InxGa1−xN/GaN multiple and single quantum well MQW and SQW structures that possess various numbers of QWs in the confinement region adjacent to a SQW. The aim is to study the influence of the structure of an InGaN MQW confinement region on carrier transfer and collection into a coupled SQW. By applying in ...