Abstract Low leakage diodes are necessary in order to manufacture high-quality variable capacitance (varicaps), which used voltage-controlled oscillators. Junction current affects the single sideband noise of oscillator by up-conversion 1/ f and shot (Chan et al. IEEE Trans Electron Devices 54(9):2570–2573, 2007, https://doi.org/10.1109/TED.2007.903201 ). Several sources show higher for RTP com...

This study investigates the effectiveness of flash-assist rapid thermal processing in dissolving the end of range damage inherent to preamorphizing implants. A series of silicon wafers is preamorphized with a Ge implant and subsequently implanted with B. The wafers are then subjected to a flash anneal, a rapid thermal anneal, or both annealing processes. The flash anneal results in higher defec...

Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark...

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WC introduce a new technique for rapidly heating (10’ “C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high-current dc electrical pulse to a conductive substrate-heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from lo3 to lo6 “C/s. The temperature of ...

The density and spatial distribution of oxide precipitates within a crystalline silicon wafer is of paramount importance for microelectronic device yield. In this letter, the authors show how the formation of previously unconsidered, very small vacancy aggregates can explain macroscopic spatial variations in the oxide precipitate density, which are observed following certain rapid thermal annea...

Thermal ALD deposited Al2O3 films on silicon show marked difference in surface passivation quality as a function of annealing time (using rapid thermal process). An effective and quality passivation is realized in short anneal duration (~100s) which is reflected in the low surface recombination velocity (SRV <10 cm/s). The deduced values are close to the best reported SRV obtained by high therm...

The effect of high temperature annealing of the InAs/ InP quantum dots QDs containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900 °C for 30 s. The QDs with the GaAs interlayer show good thermal stability up to 850 °C as well as enhanced integrated photoluminescence PL intensity and reduced PL linewidth. The effect of high energy 450 keV...

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Recently, solid-phase recrystallization of ultrathin indium antimonide nanocrystals (InSb NCs (films grown on SiO2/Si substrate is very attractive, because of the rapid development of thermal annealing technique. In this study, the recrystallization behavior of 35 nm indium antimonide film was studied. Through X-ray diffraction (XRD) analysis, it is demonstrated that the InSb film is composed o...