1.Introduction Millimeter-wave CMOS RF circuits have been received substantial attention in recent years, motivated by the advancement of CMOS process. The RF circuit consists of several metal layers and vias. The metal filling rate must be satisfied, usually 25% to 75% to satisfy design rules in the semiconductor process, especially chemical mechanical polishing (CMP) rule. Because of CMP rule...

This paper presents a radio-frequency (RF) transceiver fabricated in a UMC RF 0.18 μm CMOS process. The RF transceiver was built to operate at the 5.7 GHz ISM band. The transceiver has a total power consumption of 23 mW and it is intended for the use in each wireless node of a wireless sensor network.

CMOS deep N-well technology can eliminate the physical effects of NMOS transistors and reduce substrate noise and coupling in order to reach the NMOS channel. These properties result in better LO-IF and LO-RF isolations in a Gilbert micromixer. Two identical 0.18m CMOS downconversion micromixers (except at the RF input stage) with deep N-well or without deep N-well are fabricated in adjacent ar...

Title of Dissertation: DESIGN AND FABRICATION OF ON CHIP MICROWAVE PULSE POWER DETECTORS Woochul Jeon, Doctor of Philosophy, 2005 Directed By: Professor John Melngailis Department of Electrical and Computer Engineering On-chip microwave pulse-power detectors are promising devices for many electrical systems of both military and commercial applications. Most research in microwave power detector ...

Design of an RF CMOS ultra-wideband amplifier using parasitic-aware synthesis and optimization

This article presents a validation of the EKV3 MOSFET compact model dedicated to the design of analogue/RF ICs using advanced CMOS technology. The EKV3 model is compared with DC, CV and RF measurements up to 20 GHz of a 110 nm CMOS technology. The scaling behaviour over a large range of channel lengths and bias conditions is presented. Long-channel devices show significant non-quasi static effe...

The choice of the CMOS radio frequency (RF) transceiver architecture affects the design of the whole system and is thus a fundamental one. In order to make a good choice, several factors have to be considered, the most important ones being: performance, power consumption, die size, cost, integration level, and time-to-market. The minimum required performance is dictated by the IEEE802.15.4 stan...

Analog and RF circuit performance in single-chip transceivers can severely suffer from coupling of digital switching noise to the silicon substrate. To predict this performance degradation, a deeper understanding of the impact of substrate noise is absolutely necessary. Using measurements, this impact is studied as the cascade of an attenuation through the substrate from the source of substrate...