Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowire ensembles were measured. The small linewidth of the optical phonon modes agree with an excellent crystalline quality. A surface phonon mode was also revealed, as a shoulder at lower fre...

The initial growth of ~234! phosphorous islands on ~432! terraces of gallium arsenide ~001! has been studied. The islands grow anisotropically in the @110# direction with an aspect ratio of approximately 8 to 1 at moderate coverages. The distribution of island widths in the @ 1̄10# direction follows a Gaussian function. The mean width increases from 2466 to 47611 Å as the phosphorous coverage in...

Recent experiments at the Stanford Linear Accelerator Center (SLAC) [l] have demonstrated that the photoemitted number of electrons from a cesium-activated gallium arsenide (GaAs) crystal saturates at high incident flux, becoming insensitive to the incident photon flux at high intensity. This article offers a physical model that attempts to explain this phenomenon. A comparison of experimental ...

Gallium arsenide (GaAs) based microaccelerometers are being developed for guidance and navigation subsystems, and various microsensor systems. The microaccelerometer is a microelectromechanical system (MEMS) micromachined on top of GaAs substrate or GaAs integrated cirwits. The MEMS accelerometer is integrated on the same chip as the GaAs readout circuit and the GaAs analog to digital converter...

Type Device Wavelength (nm) Band Helium-Neon Tank, gunnery trainer 642.8 Visible (red) Ruby Rangefinder 694.3 Visible (red) Gallium-Arsenide MILES 905.0 Near-infrared Nd:YAG Rangefinder, target designator 1,064.0 Near-infrared Carbon Dioxide Rangefinder 10,600.0 Far-infrared MILES: multiple integrated laser engagement system Nd:YAG: neodymium:yttrium-aluminum-garnet Adapted from Headquarters, D...

Positron Annihilation techniques have been used to investigate two important defects that occur naturally in semi-insulating (SI) Gallium arsenide. The growth and assessment of SI GaAs and the application of PA to defect analysis of this important material are reported.

Emerging trend in semiconductor nanotechnology motivates to design various crystalline nanotubes. The structural and electronic transport properties of single walled zigzag Gallium Arsenide nanotubes have been investigated using Density Functional Theory (DFT) and Non-Equilibrium Green’s Function (NEGF) based First Principle formalisms. Structural stability and enhanced electronic transmission ...