نتایج جستجو برای: semiconducting material

تعداد نتایج: 368761  

Journal: :Science 2004
Chuanbin Mao Daniel J Solis Brian D Reiss Stephen T Kottmann Rozamond Y Sweeney Andrew Hayhurst George Georgiou Brent Iverson Angela M Belcher

We report a virus-based scaffold for the synthesis of single-crystal ZnS, CdS, and freestanding chemically ordered CoPt and FePt nanowires, with the means of modifying substrate specificity through standard biological methods. Peptides (selected through an evolutionary screening process) that exhibit control of composition, size, and phase during nanoparticle nucleation have been expressed on t...

Journal: :Nano letters 2011
Seoung-Ki Lee Beom Joon Kim Houk Jang Sung Cheol Yoon Changjin Lee Byung Hee Hong John A Rogers Jeong Ho Cho Jong-Hyun Ahn

With the emergence of human interface technology, the development of new applications based on stretchable electronics such as conformal biosensors and rollable displays are required. However, the difficulty in developing semiconducting materials with high stretchability required for such applications has restricted the range of applications of stretchable electronics. Here, we present stretcha...

Journal: :Physical chemistry chemical physics : PCCP 2014
Subhasish Roy Dibakar Kumar Maiti Shrabani Panigrahi Durga Basak Arindam Banerjee

Self-assembled bolaamphiphilic perylene bisimide (PBI) containing an amino acid appended fluorescent semiconducting soft material (hydrogel) has been discovered at physiological pH. This new organic material based on self-assembled perylene bisimide appended amino acid-based bolaamphiphile (PBI-C11-Y) has been well characterized using various techniques including UV-Vis, fluorescence, X-ray dif...

Journal: :Nano letters 2010
Xinning Ho Lina Ye Slava V Rotkin Qing Cao Sakulsuk Unarunotai Shuaib Salamat Muhammad A Alam John A Rogers

Recent studies and device demonstrations indicate that horizontally aligned arrays of linearly configured single-walled carbon nanotubes (SWNTs) can serve as an effective thin film semiconductor material, suitable for scalable use in high-performance transistors. This paper presents the results of systematic investigations of the dependence of device properties on channel length, to reveal the ...

2000
Ingrid Mertig

A new formalism to calculate the transmission coefficient t of electrons from a material L into the same material L through a barrier B is presented. The barrier B is arbitrary and can be metallic, semiconducting or insulating. The important feature of this formalism is that it starts from the electronic structure of a periodic L/B superlattice. The electronic stucture of such a superlattice is...

2015
Jiantong Li Frank Schwierz

Two-dimensional (2D) layered materials are anticipated to be promising for future electronics. However, their electronic applications are severely restricted by the availability of such materials with high quality and at a large scale. In this review, we introduce systematically versatile scalable synthesis techniques in the literature for high-crystallinity large-area 2D semiconducting materia...

2007
Ingmar Riedel Peter Zahn Ingrid Mertig

A formalism to calculate the transmission coefficient t of electrons from a material L into the same material L through a barrier B is presented. The barrier B is arbitrary, and can be metallic, semiconducting, or insulating. The important feature of this formalism is that it starts from the electronic structure of a periodic L/B superlattice. The electronic structure of such a superlattice is ...

2006
Zhong Lin Wang

Zinc oxide is an important semiconducting and piezoelectric material. Structurally, due to the three types of fast growth direction: <0001>, <011 0> and <21 1 0> as well as the ±(0001) polar surfaces, a diversity group of ZnO nanostructures have been grown in our laboratory: including nanocombs, nanosaws, nanosprings, nanorings, nanobows and nanopropellers. This article reviews our recent progr...

2013
C. Gopinathan M. Kavitha

We have been prepared Semiconducting oxide material like TiO2, SiO2, TiO2-SiO2 and TiO2/SiO2 thin films for taken different composition by using hydrothermal method. All these elements were deposited on the glass substrate. In this films are acted on the p and n type working with the majority carrier are recombination of electron and hole .This material is N type but it will acted p-type Ti and...

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