We review current research on the electronic properties of nanoscale metallic islands and clusters deposited on semiconductor substrates. Reported results for a number of nanoscale metal-semiconductor systems are summarized in terms of their fabrication and characterization. In addition to the issues faced in large-area metal-semiconductor systems, nano-systems present unique challenges in both...

We discuss the ability of the nation's measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the...

We demonstrate label-free imaging of living cells using a GaInAsP semiconductor imaging plate. The photoluminescence (PL) intensity is changed by immersing the semiconductor wafer in different pH solutions and by depositing charged polyelectrolytes on the wafer. Various observations indicate that this phenomenon arises from the radiative and surface recombination rates modified by the Schottky ...

A theory based on the Bardeen formalism is developed for computing the tunnel current between a metal tip and a semiconductor surface. Tip-induced band bending in the semiconductor is included, with the electrostatic potential computed in a fully threedimensional model whereas the tunnel current is computed in the limit of large tip radii. Localized states forming at the semiconductor surface a...

Classification, essential properties, important applications and developement of power semiconductor devices will be explained. Some common power semiconductor devices, power metal oxide semiconductor field-effect transistor (MOSFET), thyristor and some new power devices will be described and discussed.

Nanoelectromechanical (NEM) switches are similar to conventional semiconductor switches in that they can be used as relays, transistors, logic devices and sensors. However, the operating principles of NEM switches and semiconductor switches are fundamentally different. These differences give NEM switches an advantage over semiconductor switches in some applications--for example, NEM switches pe...

The optical properties of plasmonic semiconductor devices fabricated by focused ion beam (FIB) milling deteriorate because of the amorphisation of the semiconductor substrate. This study explores the effects of combining traditional 30 kV FIB milling with 5 kV FIB patterning to minimise the semiconductor damage and at the same time maintain high spatial resolution. The use of reduced accelerati...

cadmium oxide rhombus-shaped nanostructure was synthesized using hydrothermal process followed by heating treatment. clearly, x-ray diffraction pattern demonstrated the formation of cdo crystalline phase. scanning electron microscopy (sem) showed that the obtained rhombus-like structure is composed of nanoparticles with the average size of 29 nm. in addition, we evaluated adsorption of organic ...

abstract background: in vivo measurements of applied dose during radiotherapy treatment, is important to ensure accurate dose delivery to patients. uncertainty in dose delivery should fall within ±5% of the prescribed dose as recommended by icru. assessment of dose for radiotherapy applications performed with various types of detectors. in this study, semiconductor diodes were used which have s...