Impurity-based p-type doping in wide-band-gap semiconductors is inefficient at room temperature for applications such as lasers because the positive-charge carriers (holes) have a large thermal activation energy. We demonstrate high-efficiency p-type doping by ionizing acceptor dopants using the built-in electronic polarization in bulk uniaxial semiconductor crystals. Because the mobile hole ga...

Chemical doping of an electron transporter results in the formation of a radical anion containing semiconductor which showed high electron mobility (13 cm(2) V(-1) s(-1)) at low operating voltage (1 V).

In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped...

We discuss analytical and numerical methods for the optimization of optoelectronic devices by performing optimal control of the PDE governing the carrier transport with respect to the doping profile. First, we provide a cost functional that is a sum of a regularization and a contribution, which is motivated by the modal net gain that appears in optoelectronic models of bulk or quantum-well lase...

Doping—the intentional introduction of impurities into a material—is fundamental to controlling the properties of bulk semiconductors. The prospect of new technologies has motivated similar efforts to dope semiconductor nanocrystals since their discovery two decades ago. Despite some successes [1–5], many of these efforts have failed, for reasons that remain mysterious. For example, individual ...

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Doping is extremely important for controlling the electronic conductivity of bulk semiconductors. However, very few examples exist where impurities that have been incorporated into colloidal semiconductor nanocrystals affect their electronic properties. Here we will discuss the challenges in this area as well as recent progress. In particular, we will describe an approach to lightly dope semico...