نتایج جستجو برای: semiconductor laser

تعداد نتایج: 237377  

2015
P. Dumont J.-M. Danet D. Holleville S. Guerandel G. Baili L. Morvan G. Pillet D. Dolfi G. Beaudoin I. Sagnes P. Georges G. Lucas-Leclin

Coherent population trapping (CPT) is a common technique used in compact atomic clocks which requires two-phase coherent laser modes with a frequency difference in the GHz range for alkali atoms [1]. To improve the performance vs size trade-off of Cs atomic clocks, we develop a laser source generating two crosspolarized coherent laser fields at 852 nm. It relies on the dual-frequency and dual-p...

2001
Weng W. Chow Hans Christian Schneider Stephan W. Koch Chih-Hao Chang Connie J. Chang-Hasnain

This paper presents a laser model for describing the effects of nonequilibrium carrier distributions. The approach is based on the coupled Maxwell-semiconductor-Bloch equations, with carrier–carrier and carrier–phonon collisions treated in the relaxation rate approximation. Using examples involving relaxation oscillation, current modulation, and optical injection, we demonstrate how the model c...

2004
Farhan Rana Peter Mayer Rajeev J Ram

Semiconductor cascade lasers have larger photon noise than conventional semiconductor lasers as a result of positive correlations in photon emission in different gain stages which are connected electrically in series. The photon noise of a cascade laser can be related to the photon noise of a single-stage laser with a scaled external circuit impedance. This scaling relation for the photon noise...

جعفری, اکبر, مبهوتی, خسرو,

In this paper, by placing the electro optical modulator (EOM) into the external cavity of the semiconductor laser (SL) and amplitude modulation of the optical feedback, the dynamical variation of the output intensity  of the laser has been studied. This is analyzed numerically via bifurcation and time series diagrams with respect to the applied amplitude modulation index, and modulation voltage...

The absorption properties of charge transfer organic semiconductor TTF-TCNQ (tetrathiafulvalene-tetracyanoquhodimete ) filmsdeposited on KBr singlecrystal, quartz and glass substrates in far infrared have been investigated. An absorption edge at ?10 ??m was observed. Photoconductivity, photoconduction efficiency and gain and photocarrier's lifetime have been measured. The results show an el...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه رازی - دانشکده علوم 1387

boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...

Journal: :J. Inform. and Commun. Convergence Engineering 2010
Jung-Tae Kim

457 Abstract—we have analyzed tens of Giga pulse signal generation using sideband injection locking scheme. The numerical model for semiconductor lasers under the strong optical injection is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. The numerical simulation results show th...

2009
E. M. Shahverdiev K. A. Shore

By studying the autocorrelation function of the optoelectronic feedback semiconductor laser output we establish that the signatures of time delays can be erased in systems incorporating modulated feedback time delays. This property is of importance for the suitability of such laser systems for secure chaos-based communication systems. We also make the first report on chaos synchronization in bo...

2004
Rongqing Hui

Absfnzst-Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold; Although conventionally the OB switch-off time in dispersive semiconductor laser ampliers is limited by the effective...

AA Rostami C. P. Grigoropoulos,

The rapid melting of silicon film due to the absorption of a CW laser beam radiation is studied. The silicon film melting and recrystallization is mainly controlled by the temperature distribution in the semiconductor. The enthalpy technique for the solution of phase change problems is used in an explicit finite difference form to calculate the transient temperature distribution in the silicon ...

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