Classification, essential properties, important applications and developement of power semiconductor devices will be explained. Some common power semiconductor devices, power metal oxide semiconductor field-effect transistor (MOSFET), thyristor and some new power devices will be described and discussed.

Abstract We propose the design and fabrication of a coplanar electrode structure for an organic metal–semiconductor field-effect transistor (OMESFET), with gate self-aligned between source drain electrodes. first used nanoimprint lithography (NIL) to define channel area device on patterned metal, then chemical wet etching create electrodes by removing metal in area. After etching, was deposited...

As metal-oxide-semiconductor field-effect transistors (MOSFETs) channel lengths (L g) are scaled to lengths shorter than L g < 8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario, a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be eng...

The efficient detection of charged biomolecules by biosensor with appropriate semiconducting nanomaterials and with optimum device geometry has caught tremendous research interest in the present decade. Here, the performance of various label-free electronic biosensors to detect bio-molecules is investigated by simulation technique. Silicon nanowire sensor, nanosphere sensor and double gate fiel...

Almost ever since the advent of the microelectronics adventure, silicon-based MOSFET (metal–oxide–semiconductor fieldeffect transistor) technology has been largely dominant. However, for a few years now this technology has exhibited some fundamental limitations in tackling the increasingly challenging issues of miniaturization and improvements in processing speed and power consumption. Hence, n...

We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of insulator Al2O3. perform magneto-transport measurements and find crossover from weak localization to antilocalization effect with increasing voltage, demonstrates that the Rashba spin-orbit coupling tuned by e...