نتایج جستجو برای: semiconductors

تعداد نتایج: 27616  

2016
Yoyo Hinuma Taisuke Hatakeyama Yu Kumagai Lee A. Burton Hikaru Sato Yoshinori Muraba Soshi Iimura Hidenori Hiramatsu Isao Tanaka Hideo Hosono Fumiyasu Oba

Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitride semiconductors using first-principles calcu...

2013
D. S. Yadav Chakresh Kumar

Using the plasma oscillations theory of solids, 2 empirical relations have been proposed for the calculation of the structural properties such as bond-stretching central force constant (α) and bondbending non-central force constant (β) for II-VI and III-V group binary semiconductors. We find that α =D (ћωp) 2 and β = S (ћωp) 2 , where D and S are constants. The numerical values of D and S are r...

2010
V. N. ANTONOV O. JEPSEN

Diluted magnetic semiconductors (DMSs) are semiconductors alloyed with magnetic elements [1]. The physical properties of these materials can be tuned by both charge and spin, thus, they have great potential of being used in a wide variety of spintronic applications, such as magneto-optical, magneto-electrical, and magneto-transport devices. Spintronics (spin+electronics) is the technology that ...

2009
Jun Takeya Takeshi Yamao Yasuhiro Shimizu Hirofumi Kuriki Jongwan Choi Heeseok Song Yasuhiko Arakawa Takeomi Morita Vipul Singh Shinya Oku Yoshiro Yamashita

The advantages of organic field-effect transistors (OFETs), such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organ...

2006
Isamu Akasaki Hiroshi Amano Isamu AKASAKI Hiroshi AMANO

Marked improvements in the crystalline quality of GaN enabled the production of GaN-based p−n junction blue-light-emitting and violet-laser diodes. These robust, energetically efficient devices have opened up a new frontier in optoelectronics. A new arena of wide-bandgap semiconductors has been developed due to marked improvements in the crystalline quality of nitrides. In this article, we revi...

2016
Takayoshi Kubo Roger Häusermann Junto Tsurumi Junshi Soeda Yugo Okada Yu Yamashita Norihisa Akamatsu Atsushi Shishido Chikahiko Mitsui Toshihiro Okamoto Susumu Yanagisawa Hiroyuki Matsui Jun Takeya

Organic molecular semiconductors are solution processable, enabling the growth of large-area single-crystal semiconductors. Improving the performance of organic semiconductor devices by increasing the charge mobility is an ongoing quest, which calls for novel molecular and material design, and improved processing conditions. Here we show a method to increase the charge mobility in organic singl...

2013
David B. Tanner

This course describes the interaction of electromagnetic radiation in the “optical” part of the spectrum (microwaves, infrared visible, ultraviolet) with matter—metals, insulators, semiconductors, and superconductors. Topics covered include the following. 1. Maxwell’s equations and plane waves in matter. 2. The refractive index N and the complex dielectric function, . 3. Semiclassical theories ...

2006
Orazio Muscato

In this paper we prove the existence of the high-energy tails for electron distribution function of the Boltzmann equation for semiconductors, in the stationary and homogeneous regime, in the analytic band approximation and scattering with acoustic and optical phonons and impurities. We also prove numerically that the tail is a global maxwellian in the parabolic band approximation, and in the q...

2008
H. Bracht Hartmut Bracht

Point defects in semiconductors play a decisive role for the functionality of semiconductors. A detailed, quantitative understanding of diffusion and defect reactions of dopants is required for advanced modelling of modern nanometer size electronic devices. With isotope heterostructures which consist of epitaxial layers of isotopically pure and deliberately mixed stable isotopes, we have studie...

2007
M. P. Hanson

The electronic properties of epitaxial semiconductors are strongly modified by the inclusion of semi-metallic nanoparticles grown in the semiconductor. For example, epitaxial semi-metallic nanoparticles can donate carriers, pin Fermi levels, shorten electron–hole recombination times, enhance electron tunneling and increase scattering of phonons in semiconductor host layers. There are dozens of ...

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