Zero bias Schottky diode model for low RF input power (≤ 0 dBm at antenna input port) and moderate DC current (≥ 30 μA) RECtifying anTENNAs (RECTENNAs) is investigated. The model provides diode parameters at the desired output DC current level to be matched with the antenna so that optimum power transfer from antenna to the diode occurs. The model relies primarily on DC V-I diode characteristic...

In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by usin...

This article studies the sub-linearity of output characteristics measured in Schottky-barrier metal-oxide-semiconductor field-effect transistors with simulations and experiments. It is shown that not due to forward-biased Schottky diode at drain contact interface but bias impact on source-side Schottky-barrier, resulting an increased carrier injection increasing drain–source voltage. The simula...

Abstract We developed a novel terahertz-wave detector fabricated on SiC platform implementing an InP/InGaAs Fermi-level managed barrier (FMB) diode. The FMB diode epi-layers were transferred substrate, and waveguide coupler filters monolithically integrated with Then, the chip was assembled in fundamental mixer module WR-3 rectangular-waveguide-input port. It exhibited minimum noise equivalent ...

The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into potential barrier formation and band bending by ab initio simulations and model analysis of a pro...

This paper experimentally studies the temperature dependencies of current–voltage (I–V) and capacitance–voltage (C–V) characteristics of SiC power devices, and discusses the relationships between physical phenomena and the measured characteristics in SiC. Two SiC Schottky barrier diodes (SBD) with different specifications were studied for temperatures ranging from 25 to 450◦C. Their I–V charact...

Whisker contacted GaAs Schottky barrier diodes are the standard devices for mixing and multiplier applications in the THz frequency range. With the decreasing size of Schottky diodes for operation at higher frequencies, the reliability and the physical understanding of the Schottky barrier becomes increasingly important. In this contribution, we present new results concerning the reliability of...