Si1 xGex thin films on the Ar + ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 · 10 cm ) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to characterize these Si1 xGex films. Investigations by Rutherford backscattering spectroscopy/channeling (RBS/C...

Under strain the electronic properties of Si and SiGe significantly change. For the semiconductor industry the improvement of the kinetic properties is most interesting. In this work we present Monte Carlo modeling of the low field electron mobility in strained Si1 xGex layers grown on relaxed Si1 yGey substrates of arbitrary orientation. An analytical conduction band model is used. The valley ...

A review is presented of Si / Si1-xGex heterostructures which may be used for electronic transistors along with more exotic designs of electrical devices including quantum effect devices. Important issues including integration of the devices with present technology along with defect problems will be presented. The final section will explore exotic quantum devices and review the potential for di...

In this work, we explore various optimization techniques using bandgap engineering to enhance the performance of tunnel FETs (T-FET) using extensive device simulations. We show that the heterostructure (Si1-γGeγ source or drain) tunnel FET (HT-FET) architecture allows scaling of the device to sub 20 nm gate length regime. N-channel HT-FET is optimized to meet ITRS low standby power and high per...

In this work, we address issues pertinent to the understanding of the structural and electronic properties of Si1−xGex alloys, namely, (i) how does the lattice constant mismatch between bulk Si and bulk Ge manifests itself in the alloy system? and (ii) what are the relevant strain release mechanisms? To provide answers to these questions, we have carried out an in-depth study of the changes in ...

The maximum theoretical open circuit voltage of a solar cell is set by its builtin voltage. For amorphous silicon p-i-n cells, the position of the Fermi levels in the p-and ncontact regions are on the order of 0.4 eV and 0.2eV from their respective band edges, limiting the built-in voltage to Eg 0.6eV. We propose replacing the pand n regions by superlattices, in which the Fermi levels in the wi...

Pentagon-shaped silicon wires with linewidth around 300 nm are successfully fabricated by using the Si/SiGe epitaxy technique, reactive ion etching, and subsequent selective chemical etching. The nanowires are oxidized in wet O2 at 750 ◦C and 850 ◦C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowir...

This study aimed to investigate the kinetics of dietary GSH in gastrointestinal tract and effect on intestinal redox status weaned piglets. Forty-eight piglets with an average age 26 days body weight 7.7 kg were used this study. The divided into three treatment groups including control group a basal diet (CON) two supplemented 0.1% (LGSH) 1.0% (HGSH), respectively. did not contain any GSH. expe...