Initial stage of the C49-TiSi, formation was investigated at 530 “C and at a rate of 10 “C/m using transmission electron microscopy. Morphological studies reveal that the C49 phase first separately nucleates at the interface between amorphous silicide and crystalline silicon, then followed by simultaneous lateral and vertical growth. The growth proceeds very fast until the formation of a contin...

The reaction of Co with epitaxial SiGeC/Si layers is investigated and compared to the reaction of Co with SiGe/Si layers. The sequence of phase formation is the same as the reaction of Co with monocrystalline Si, however, cobalt disilicide is formed at much higher temperatures. The presence of C further delays the disilicide formation, as a result of C accumulation at the silicide/substrate int...

We investigate the structure, stability, and electronic properties of yttrium silicide nanowires with AlB2-type structure, using ab initio calculations. The results confirm experimental findings that yttrium silicide nanowires are robust and conductive. In particular, the dependencies on nanowire thickness are analyzed. Furthermore, calculations show that the vacancy formation in stoichiometric...

In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were m...

Characterization and modeling of high current conduction in Ti& and COSz films formed on n+ Si and n+ polySi under DC and pulsed stress conditions is reported for the first time. High current conductance of silicides is shown to be strongly affected by the technology and process conditions. The non-linear I-V characteristics of silicide films under DC and pulsed high current stress has been mod...

Aligned carbon nanotubes have been grown using microwave plasma enhanced chemical vapor deposition (PECVD). The carbon nanotubes are nucleated from iron catalyst particles which, during growth, remain adherent to the silicon substrates. By analysis with high-resolution electron microscopy, we observe iron silicide roots penetrating into the silicon substrate at the interface of the catalyst par...

In this paper, we propose and investigate a schottky tunneling source impact ionization MOSFET (STSIMOS) with enhanced device performance. STS-IMOS has silicide (NiSi) source to lower the breakdown voltage of conventional impact ionization MOS (IMOS). There is cumulative effect of both impact ionization and source induced tunneling for the current gating mechanism of the device. The silicide so...

Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as wel...

In this work, ultrathin titanium silicide layers were grown on Si(1 1 1) substrates, with the aim to stimulate spontaneous growth of nanostructures by self-assembly. Scanning tunneling microscopy was used as a primary tool for a close, in situ monitoring of the related surface processes. This method enabled a detailed observation of the formation and subsequent evolution of the silicide nanoisl...

A review of the formation processes for nickel silicide is given to assess the limitations of using the silicide for sub-65 nanometer technologies. Various aspects attributed to the NiSi formation process are described and addressed by using a two-step process sequence for annealing. The focus of this study was to develop a process sequence with three principal steps to achieve low resistivity ...