The authors demonstrate an optical manipulation mechanism of gas bubbles for microfluidic applications. Air bubbles in a silicone oil medium are manipulated via thermocapillary forces generated by the absorption of a laser in an amorphous silicon thin film. In contrast to previous demonstrations of optically controlled thermally driven bubble movement, transparent liquids can be used, as the th...

Articles you may be interested in Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors Appl. Temperature dependence of negative bias under illumination stress and recovery in amorphous indium galli...

Silicon heterojunction solar cells have high opencircuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (aSi:H) layers deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ plasma diagnostics and ex-situ film characterization, we show that the best a-Si:H films for passivation are produced from deposition regimes clo...

Molybdenum oxide (α-MoO)thin films were prepared on quartz and silicon substrates by thermal oxidation of Mo thin films deposited using DC magnetron sputtering method. The influence of thermal oxidation times ranging from 60-240 min on the structural and morphological properties of the preparedfilms was investigated using X-ray diffraction, Atomic force microscopy and Fourier transform infrared...

Articles you may be interested in Optimized amorphous silicon oxide buffer layers for silicon heterojunction solar cells with microcrystalline silicon oxide contact layers Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer Appl. Analysis of sub-stoichiometric hydrogenated silicon oxide films for surface passivation of crystalline silicon ...

We have developed low-defect, low-stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiNx) at 200°C. The intrinsic stress of this SiNx film is only -12.9 MPa (compressive). Coupled with the low defect (low charge trapping) characteristic of this low-stress SiNx, we are able to demonstrate amorphous silicon thin-film transistors (a-Si TFTs) with nearly threefold increase i...

Optical characterization methods were applied to a series of microcrystalline silicon thin films and solar cells deposited by the very high frequency glow discharge technique. Bulk and surface light scattering effects were analyzed. A detailed theory for evaluation of the optical absorption coefficient a from transmittance, reflectance and absorptance ~with the help of constant photocurrent met...

Though tungsten trioxide (WO3) in bulk, nanosphere, and thin film samples has been extensively studied, few studies have been dedicated to the crystallographic structure of WO3 thin films. In this work, the evolution from amorphous WO3 thin films to crystalline WO3 thin films is discussed. WO3 thin films were fabricated on silicon substrates (Si/SiO2) by RF reactive magnetron sputtering. Once a...

Articles you may be interested in A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination Instability of amorphous hafnium-indium-zinc-oxide thin film transistors under negative-bias-illumination stress Appl. Investigation of zinc interstitial ions as the origin of anomalo...