We show that a microfabricated field-effect sensor located at the terminus of a freestanding cantilever can detect surface potential changes resulting from the adsorption of charged molecules in an aqueous environment. The charge sensitive region, defined by lightly doped silicon, is embedded within the heavily doped silicon cantilever. Since both the electrical trace and sensitive region are p...

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into RGB parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This ...

A corona discharge is used to create and store negative charge in the silicon nitride films of silicon dioxide/silicon nitride stacks. Effective lifetime measurements on both textured and planar, as well as both boron diffused and undiffused silicon samples passivated with silicon oxide/silicon nitride stacks, show that the creation of negative charge in the nitride layer results in an improvem...

In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings, and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during t...

one of the most important ingredients responsible for the success of integrated silicon technology is the Metal Oxide Semiconductor Field-Effect Transistor (MOSFET), and a major reason for its success is the MOSFET's scalability. Although the industry uses silicon and silicon dioxide in the electronic devices, it can be used for opto-electronic devices as well due to formation of fractal oxide ...

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer fro...

A versatile fabrication process that allows users to quickly construct micromachined structures using a one metal, one silicon dioxide film stack on a silicon wafer is presented in this technical report. This simplified process, called Mock CMOS, (a) starts from pre-processed wafers and requires only one photolithography step, (b) provides a conductor material for actuating electrostatic and th...

E' centers (trivalent silicons) in two silicate systems, thermally grown SiO 2 films on silicon and high surface area bulk sol-gel silicates, have been investigated. In the thermally grown silicon dioxide films, earlier work is extended by demonstrating that the hole trapping process is reversible; no complex structural rearrangement occurs at the hole trapping site (E' centers) after subsequen...

The thickness of silicon dioxide that is used as the transistor gate dielectric in most advanced memory and logic applications has decreased below 7 nm. Unfortunately, the accuracy and reproducibility of metrology used to measure gate dielectric thickness during manufacture of integrated circuits remains in some dispute. In addition, detailed materials characterization studies have resulted in ...

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