We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated resonant cavity-enhanced Si photodetectors with 40% quantum efficiency at 860 nm and a full-width at h...

SOI (silicon-on-insulator) technology suffers from a number of floating body effects, most notably parasitic bipolar and history effects. These are influenced by the rapidly increasing gate tunneling current caused by an ultra-thin gate oxide, even at scaled VDDs [8]. This paper analyzes these effects in detail and proposes a number of novel circuit styles to minimize them. Simulation results a...

We propose and simulate the characteristics of optical filters based on subwavelength gratings. In particular, we demonstrate through numerical simulations the feasibility of implementing SWG Bragg gratings in silicon-on-insulator (SOI). We also propose SWG ring resonators in SOI and verify their operation using numerical simulations and experiments. The fabricated devices exhibit an extinction...

We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several junctions, guard-ring structures, dimensions, etc. In this paper, characterization results of the...

For radiation hardened image sensors, a Silicon-On-Insulator (SOI) -Si/ 4H-SiC hybrid pixel device was developed. The consists of one Si photodiode and three nMOSFETs. At fabrication, SOI substrate directly bonded on via SiO2. After bonding, the base silicon Buried Oxide (BOX) were removed by TMAH wet-etching. By using this SOI-Si/ substrate, SOI-Si photodiodes nMOSFETs integrated in same subst...

The combination of silicon-on-insulator (SOI) substrates with ultrathin Si and insulator layers opens new opportunities for quantum effect and hot-electron devices. Unlike their III–V predecessors, these devices have the crucial advantage of potential integrability with dominant silicon technology. We discuss three examples of such SOI devices: a three-terminal real-space transfer transistor wi...

We have designed a high-efficiency broadband grating coupler for coupling between silicon-on-insulator (SOI) waveguides and optical fibers. The grating is only 13 microm long and 12 microm wide, and the size of the grooves is optimized numerically. For TE polarization the coupling loss to single-mode fiber is below 1 dB over a 35-nm wavelength range when using SOI with a two-pair bottom reflect...

The leakage loss due to TM-TE mode coupling of TM-like whispering gallery mode in silicon-on-insulator (SOI) thin-ridge disk resonators is investigated for the first time to the best of our knowledge. We show that the propagation losses of TM-like mode in thin-ridge SOI disk resonators are significantly impacted by the radius of the disk. This behavior is predicted by a simple phenomenological ...

The dispersive properties of silicon-on-insulator (SOI) waveguides are studied by using the effective-index method. Extensive calculations indicate that an SOI waveguide can be designed to have its zero-dispersion wavelength near 1.5 microm with reasonable device dimensions. Numerical simulations show that soliton-like pulse propagation is achievable in such a waveguide in the spectral region a...

Silicon nanowire sensors are fabricated from the active silicon layer of silicon-on-insulator (SOI) wafers and used for label-free sensing of specific proteins. A fabrication method is demonstrated which avoids the integration difficulties inherent in a bottom-up approach, without the drastic decrease in carrier mobility usually associated with reactiveion-etched nanowires. Nanowire devices are...