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An elastomer-based energy storage system for MEMS has been designed, built, and tested. Micro rubber bands have been fabricated from silicone using two different methods, laser-cut and molded, and assembled into silicon microstructures fabricated in a two-mask silicon-on-insulator (SOI) process. Using silicon hooks and force gauges designed in this process, these micro rubber bands have been ch...

The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness an...

A silicon-on-insulator grating coupler with a broad 1-dB bandwidth of 76nm and a coupling efficiency similar to that of a standard grating coupler is experimentally demonstrated. The design is based on a novel two-way-fed method. OCIS codes: (050.0050) Diffraction and gratings; (130.0130) Integrated optics

In this paper, the investigation and detailed modeling of a cascaded Raman laser, operating in the midwave infrared region, is described. The device is based on silicon-on-insulator optical waveguides and a coupled resonant microcavity. Theoretical results are compared with recent experiments, demonstrating a very good agreement. Design criteria are derived for cascaded Raman lasers working as ...

We investigate the chromatic dispersion properties of silicon channel slot waveguides in a broad spectral region centered at ~1.5 μm. The variation of the dispersion profile as a function of the slot fill factor, i.e., the ratio between the slot and waveguide widths, is analyzed. Two different dispersion regimes are identified. Keywordsintegrated optics; silicon photonics; dispersion.

A promising technique to form the silicon-on-nothing structure is presented as an alternative to the silicon-on-insulator structure. A large plate-shaped empty space in silicon ~ESS! below the surface of the silicon substrate can be fabricated by connecting the spherical empty spaces, which are formed by surface migration of Si on the patterned Si substrate. The ESS technique has the potential ...

Liquid Crystals have many applications in photonics, but often the geometrical properties of the photonic structures give problems for controlling the alignment of the liquid crystal. We demonstrate the effect on the orientation of a nematic liquid crystal by structures etched in Silicon-on-Insulator (SOI) wafers, produced by photolithography. We characterize the alignment effect of several pat...

The effect of gate length on the operation of silicon-on-insulator (SOI) MOSFET structure with a layer of buried silicon oxide added to isolate the device body has been simulated. Three transistors with gate lengths of 100, 200 and 500 nm are simulated. Simulations show that with a fixed channel length, when the gate length is increased, the output drain current characteristics slope is increas...