Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 μm thick have been deposited using a nickel sulfamate bath on both n+and p+-type silicon wafers, where a series of trenches with different widths had ...

Wafers with 1 μm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical–mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si–Si hydrophilic bonding. A mechanis...

Due to current and future anticipated widespread use of thin silicon wafers in the microelectronics industry, there is a large and growing interest in laser-based wafer dicing solutions. As the wafers become thinner, the laser advantage over saw dicing increases in terms of both the speed and yield of the process. Furthermore, managing the laser heat input during the dicing process becomes more...

Imaging the band-to-band photoluminescence of silicon wafers is known to provide rapid and high-resolution images of the carrier lifetime. Here, we show that such photoluminescence images, taken before and after dissociation of iron-boron pairs, allow an accurate image of the interstitial iron concentration across a boron-doped p-type silicon wafer to be generated. Such iron images can be obtai...

The authors report on the fabrication of 200 nm period blazed transmission gratings on silicon-on-insulator SOI wafers. These critical angle transmission CAT gratings require 3–5 m tall freestanding grating bars with a very high aspect ratio 100 and smooth sidewalls. In order to meet the challenging geometrical requirements, they modified and improved our previously reported process for the fab...

Front page headlines in the New York Times and the Wall Street Journal in 1954 heralded to the world the demonstration of the first reasonably efficient solar cells, an event made possible by the rapid development of crystalline silicon technology for miniaturised electronics. Since that time, the majority of solar cells fabricated to date have been based on silicon in monocrystalline or large-...

The production of integrated circuits and other semiconductor devices requires the introduction of impurities or dopants into the crystal lattice of a silicon substrate. This "doping" or junction formation is achieved through one of two processes: thermal diffusion or ion implantation. Ion implantation, the more contemporary and more accurate of the two processes, accomplishes junction formatio...

In this experimental work, by using the method of plasma-chemical etching, we have dealt with the causes of the creation of a distorted layer on the surface of silicon wafers during mechanical machining processes, in addition, the elucidation of connections between the structure of this layer and characteristic parameters of the mechanical strength of these wafers have been studied. Experimenta...

(2016) Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering. Copyright and reuse: The Warwick Research Archive Portal (WRAP) makes this work of researchers of the University of Warwick available open access under the following conditions. This article is made available under the Creative Commons Attribution 4.0 International license (CC...

Genesis DoS wafers are amorphous, anhydrous, tetrahedrally-coordinated diamond-like carbon (DLC) films on silicon wafers [1, 2]. Using these wafers, excellent analytical results were achieved quickly after the Genesis return for noble gasses using laser ablation [3]. Yet, obtaining precise and accurate analyses by secondary ion mass spectroscopy (SIMS) has been problematic for a decade -even wh...