Characterization of chemical reactions by initial complexes: 1,2-addition reactions to Si=C and Si=Si bonds Masae Takahashi,∗1 Tamás Veszprémi,∗2 Kenkichi Sakamoto,∗1,∗3 and Mitsuo Kira∗3 ∗1Laboratory for Organometallic Photodynamics, RIKEN Photodynamics Research Center ∗2Department of Inorganic Chemistry, Technical University of Budapest, Hungary ∗3Department of Chemistry, Graduate School of S...

The facile synthesis of the first stable selenosilanoic acid-base adduct LSi(=Se)OH(dmap) 3 (L = CH[C(Me)NAr]2, Ar = 2,6-iPr2C6H3, dmap = 4-dimethylaminopyridine), the heavier analogue of the thiosilanoic acid adduct LSi(=S)OH(dmap) 1, is reported. Both adducts 1 and 3 react readily with MesCu (Mes = 2,4,6-trimethylphenyl) to form the novel dimeric Cu(I) complexes [LSi(=E)OCu]2 (4: E = S; 5: E ...

The Au/n-Si(100) contact has been studied using reverse ballistic electron emission microscopy and spectroscopy. Two types of localised collector currents have been observed; one, positive corresponding to electron injection into Si, and the other, negative, associated with hole injection into the semiconductor. The comparative trial of BEEM and reverse BEEM images from the same area shows this...

Density-functional theory calculations are employed to investigate both the epitaxial growth and the magnetic properties of thin Mn and MnSi films on Si(001). For single Mn adatoms, we find a preference for the second-layer interstitial site. While a monolayer Mn film is energetically unfavorable, a capping-Si layer significantly enhances the thermodynamic stability and induces a change from an...

In contrast to the tetrachlorodigermane (tBu3Si)Cl2Ge-GeCl2(SitBu3), the cis,transcyclotrigermane (tBu3SiGeCl)3is sensitive to oxygen. Its treatment with O2 at ambient temperature leads to the trigermoxetane (tBu3Si)3Ge3Cl3O. According to an X-ray structure analysis of single crystals consisting of cocrystallized (tBu3Si)3Ge3Cl3O and (tBu3Si)Cl2Ge-GeCl2(SitBu3) the trigermaoxetane contains an a...

Herein we report on the reactions of the stable LSiCl (1) and LGeCl (2) [L = PhC(NtBu)(2)] with L(1)Ge, [L(1) = CH{(C[double bond, length as m-dash]CH(2))(CMe)(2,6-iPr(2)C(6)H(3)N)(2)}] (3) to yield 1-sila-5-germylene (4) and a 1,5-bis(germylene) (5). The reactions proceed through the 1,4 nucleophilic addition of the M-Cl (M = Si or Ge) to 3 without any modification of the oxidation state altho...

The remarkable versatility of palladium catalysis is exemplified by recent work in two distinct areas. Firstly, coupling chemistry is discussed, in which the reactive entity is generated by cleavage of a C–H or C–Si bond. The second part concerns the activation of allylic C–F bonds, where divergence from the normal stereochemical pattern of the reaction was observed.

Two intramolecularly donor-stabilized silenes, l-(8-dimethylamino-l-naphthyl)-l,2,2-tris(trimethylsilyl)silene (1 ), and l-[bis-2 ,6 -(dimethylaminomethyl)phenyl]-l,2 ,2 -tris(trimethylsilyl)silene 2, were studied by 2 9 Si and C NMR spectroscopy, using polarization transfer techniques in order to determine coupling constants V (2 9 Si,2 9 Si) in = 1,2, 3) and '/ ( 2 9 Si,l3 C) together with is...

A novel microwelding procedure to join Si-to-glass using ps-laser pulses with high repetition rates is presented. The procedure provides weld joint with mechanical strength as high as 85 MPa and 45 MPa in sample pairs of Si/aluminosilicate (Si/SW-Y) and Si/borosilicate (Si/Borofloat 33), respectively, which are higher than anodic bonding, at high spatial resolution (< 20 µm) and very high throu...

In this paper, we investigate the formation kinetics of Si nanowires [SiNWs] on lithographically defined areas using a single-step metal-assisted chemical etching process in an aqueous HF/AgNO3 solution. We show that the etch rate of Si, and consequently, the SiNW length, is much higher on the lithographically defined areas compared with that on the non-patterned areas. A comparative study of t...