We present a new band gap narrowing model which considers the semiconductor material and the dopant species for arbitrary finite temperatures. This unified treatment is especially useful for accurate device simulation. As a particular example we studied with our two-dimensional device simulator MINIMOS-NT the electrical behavior of a graded composition Si/SiGc HBT using a hydrodynamic transport...

The authors present an approach for implementing a system for the assessment of medical competences using a haptic simulation device. Based on Competence based Knowledge Space Theory (CbKST), information on the learners’ competences is gathered from different sources (test questions, data from the simulator, and supervising experts’ assessments). The envisaged architecture consists of three cor...

We report an equivalent circuit model for MEMS (microelectromechanical systems) electrostatic actuator using open-source circuit simulator Qucs (quite universal circuit simulator). Electrostatic force, equation of motion, and Kirchhoff’s laws are implemented by using the EDD (equation defined device) function of Qucs. Mathematic integral operation in the equation of motion is interpreted into e...

In this paper, we propose a quasi-analytical device model of nanowire FET (NWFET) for both ballistic and drift-diffusion current transport, which can be used in any conventional circuit simulator like SPICE. The closed form expressions for I-V and C-V characteristics are obtained by analytically solving device equations with appropriate approximations. The developed model was further verified w...

We present results from a three-dimensional device simulator, using adaptive meshing and solving the drift-diffusion equations. The adaption algorithm and the criteria used for adap-tion are discussed. Three devices of industrial interest are presented: a bipolar transistor, a 1.25/zm n-MOS device and a CCD, illustrating the range of devices which may be successfully simulated.

Abst rac t A parallel Monte Carlo device simulator, PMC-3D has been developed for multiprocessors. Through the use of parallel architectures, full three dimensional modeling of the device domain is possible. Here a discussion of the parallel algorithm is given for coupling the Monte Carlo particle simulation with Poisson's equation for quasi-static problems, and full Maxwell's equations for ele...

The chapter deals with the techniques used for the design, fabrication and measurement of antennas. The design and simulations are performed using the FEM based Ansoft High Frequency Structure Simulator (HFSS). The antennas are fabricated using photolithographic method.VNA HP8510C and Agilent PNA 8362B are used to measure antenna characteristics such as return loss, radiation pattern, gain etc....

Traditional WSN simulators are limited to simulating nodes at one single abstraction level. This makes system development and evolution difficult since developers cannot use the same simulator for both high-level algorithm development and low-level development such as device-driver implementations. The Contiki simulator COOJA allows for cross-level simulation, a novel type of wireless sensor ne...