Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) all...

We have performed nonlocal spin injection into a nanoscale ferromagnetic particle configured in a lateral spin-valve structure to switch its magnetization only by spin current. The nonlocal spin injection aligns the magnetization of the particle parallel to the magnetization of the spin injector. The spin current responsible for switching is estimated from the experiment to be about 200 microA,...

We study the depinning of domain walls by pure diffusive spin currents in a nonlocal spin valve structure based on two ferromagnetic Permalloy elements with copper as the nonmagnetic spin conduit. The injected spin current is absorbed by the second Permalloy structure with a domain wall, and from the dependence of the wall depinning field on the spin current density we find an efficiency of 6×1...

The role of thermal scattering in spin-dependent transport of hot electrons at 0.9 eV is studied using a spin-valve transistor with a soft Ni(80)Fe(20)/Au/Co base. Spin-dependent scattering makes the collected electron current depend sensitively on the magnetic state of the base. The magnetocurrent reaches 560% at 100 K, decays with increasing temperature, and a huge effect of 350% still remain...

A pure spin current generated within a nonlocal spin valve can exert a spin-transfer torque on a nanomagnet. This nonlocal torque enables new design schemes for magnetic memory devices that do not require the application of large voltages across tunnel barriers that can suffer electrical breakdown. Here we report a quantitative measurement of this nonlocal spin torque using spin-torque-driven f...

The key component of state-of-the-art magnetic memories and sensors is a device called a spin valve, whose electrical resistance depends on the relative alignment of the magnetizations of two thin ferromagnetic elements. Researchers are interested in developing superconducting analogs of the spin valve to be used in “cryogenic memory” technologies that consume little power and dissipate little ...

Density functional calculations of the fermiology and magnetic properties of Ca3Ru2O7 reveal an unusual state: a bulk spin valve. The ground state consists of nearly half-metallic bilayers stacked antiferromagnetically with a weak coupling. Out of plane transport is very strongly suppressed by the antiferromagnetic alignment, which can be destroyed in favor of ferromagnetism at low energy cost....

The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix—the so-called “spindrag resistivity.” It is generally quite difficult to separate the spin-drag contribution from more conventional mechanisms of resistivity. In this paper I discuss two methods to accomp...

Current-driven magnetic switching and magnetic dynamics in spin-valve nanopillars are considered in the framework of the macrospin model. The corresponding spin transfer torque is calculated in terms of the macroscopic model based on spin diffusion equations. Critical currents for switching from parallel to antiparallel magnetic configurations and to precessional regime are derived. Frequencies...

We consider theoretically a current flowing perpendicular to interfaces of a spin-valve type ferromagnetic metallic junction. For the first time an effective approach is investigated to calculate a simultaneous action of the two current effects, namely, the nonequilibrium longitudinal spin injection and the transversal spin-transfer surface torque. Dispersion relation for fluctuations is derive...