We have applied the SRIM computer code to study the sputtering of some likely astrophysical grain materials, and we have shown that selective embedding of metallic projectiles offers a partial explanation of gas-phase depletions. We show that supernova shockwaves sweep a significantly larger mass of interstellar gas per unit time than the shockwaves generated by outflows in star-forming regions...

Sputtering pressure effects and temperature-dependent magnetism of Co/Pd multilayers" (1994). David Sellmyer Publications. Paper 102. The temperature dependence of the sputtering Ar pressure effects on magnetic properties and the coercivity mechanism of Co(2 &/Pd(13 A) multilayers were studied as the sputtering Ar pressure varied from 3-15 mTorr and the temperature from 300 to 35 K. It is found...

Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For the particular case of 200-keV Xe bombardment of Au particles, we show that co...

Silicon carbide (SiC) is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions) of SiC is still lacking. In this work, we used the Monte-Carlo and molecular...

Sputter deposition processes, especially for sputtering from metal targets, are well investigated. For practical reasons, i.e. for industrial processes, energetic considerations for sputter deposition are useful in order to optimize the sputtering process. In particular, for substrates at floating conditions it is required to obtain energetic conditions during film growth that enables sufficien...

The work is focused on thin film technologies especially on sputtering of dielectric thin film layers. The set of thin film capacitors was created on silica glass substrate. Aluminum electrodes of separated capacitors are deposited by method of vacuum evaporation. The AlN dielectric layer was prepared by reactive high frequency sputtering from aluminum target in nitrogen atmosphere. Dielectric ...

Instrumentation To overcome current difficulty of absolute period control in the EUV multilayer fabrication by sputtering, we have developed an automatic null ellipsometer as a sputtering rate monitor having high enough picometer thickness sensitivity enabling accurate monitoring of the nm period multilayer fabrication [1]. Figure 1 shows schematic drawing of the ellipsometer installed as the s...

Absolute sputtering yields of liquid tin from 240 to 420 C due to irradiation by low-energy helium and deuterium have been measured. For ion energies ranging from 300 to 1000 eV, temperature enhancement of liquid tin sputtering was noted. These measurements were obtained by IIAX (the Ion-surface InterAction eXperiment) using a velocityfiltered ion beam at 45 incidence to sputter material from a...

Sputtering Yields and Specific Energy-Losses of Noble Gas-Ions of 5.6 keV at Si02 Glass Sputtering yields and damage depths caused in Si02 glass and thin Si0 2 glass-layers by Ne-, Ar-, and Xe-ions of 5.6 keV are reported for the angles of incidence 0° , 45° , and 65°. Nuclear specific energy losses are derived from the mean damage depths. The results are compared with the theory of Brandt and ...

The phenomenon of ion induced sputtering is integral to many applications. In magnetically confined fusion, this sputtering is important for both the lifetime of the plasma facing components and the contamination of the plasma. A method has been developed to obtain both the angular distribution and the total sputtering yield. The total yield is determined by collecting the sputtered material on...