In this paper, we present the temperature based simulation and analysis of gate leakage current for the proposed low-stress IP3 SRAM bit cell. In CMOS technologies, cache memory occupies a large die area and this may experience different temperatures. Under temperature variations, performance of the system may degrade. Therefore, in the IP3 SRAM cell, gate leakage has been analyzed under temper...

Most of the studies on reliability characteristics of redundant systems deal with cold standby systems only. Little attention is paid on 2-out-of-3 warm standby system involving three types of failures. In this study models for mean time to system failure and availability have been developed to study the effect of failure rate on some measures of system effectiveness. Using Chapman Kolmogorov’s...

As semiconductor technology goes into the deep submicron region, the static power caused by leakage current is no longer negligible. Gated-GND circuit technique switches SRAM cells into standby mode to reduce the static power. In this paper, we studied the detailed current scenario in a Gated-GND circuit structure. Based upon the analysis, we employed a more accurate way to estimate the efficie...

Two different system configurations with warm standby components, standby switching failures, two types of failures "common cause failure and hardware failure" and general repair are compared based on the availability. The time-tofailure for each of the primary and warm standby components are assumed to follow the exponential distribution. Laplace transforms of state probability equations are d...

In this paper, we analyze the spectra and stability of a system consisting of a working unit and repair unit, in which the working unit consists of one main unit and one standby unit, while the standby unit may deteriorate in its standby mode. Firstly, we formulate the problem into a suitable Banach space. And then we carry out a detailed spectral analysis of the system operator. Based on the s...

An ultra-low-leakage power-rail ESD clamp circuit, composed of the SCR device and new ESD detection circuit, has been proposed with consideration of gate current to reduce the standby leakage current. By controlling the gate current of the devices in the ESD detection circuit under a specified bias condition, the whole power-rail ESD clamp circuit can achieve an ultra-low standby leakage curren...

Components in cold-standby state are usually assumed to be as good as new when they are activated. However, even in a standby environment, the components will suffer from performance degradation. This article presents a study of a redundancy allocation problem (RAP) for cold-standby systems with degrading components. The objective of the RAP is to determine an optimal design configuration of co...