In this article, we propose a crystallographic model to describe epitaxy of GaN on ~112̄0! sapphire ~A plane!. The ~11̄02! cleavage plane in sapphire is shown to extend to the GaN lattice as the ~112̄0! plane, facilitating the formation of cleaved facets. It is shown that, although the lattice mismatch is much smaller than in the case of epitaxy on ~0001!, the difference in the planar symmetry in ...

65 nm and 45 nm silicon devices will utilize compositionally critical processes for gate dielectrics, capacitor dielectrics, gate and capacitor electrodes, and ultra shallow junction layers. For example, small changes in nitrogen composition have been correlated with unacceptable shifts in electrical properties of devices with SiOxNy gate dielectrics. Present optically-based metrology technolog...

Abstract Nitridation of SiO 2 /4H-SiC(112̄0) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at was conducted by using a scanning X-ray photoelectron spectroscopy microprobe. The results showed that atoms incorporated just interface nitridation proceeded much faster than /...

Unprecedented multi-channel TiN micro/nanotubes as well as various metal nitride nanofibers, including TiN, VN, NbN and ternary metal nitride nanofibers, were fabricated by a template free electrospinning method combined with post-nitridation.

The interrelationship between coherency and solute segregation at metal/metal-nitride heterophase interfaces is studied on a subnanometer scale by both atom-probe field-ion and electron microscopies for molybdenum nitride precipitates in Fe-2 at% Mo-X, where X = 0.4 at% Sb or 0.5 at% Sn. Internal nitridation at 550 degrees C generates thin platelet-shaped molybdenum nitride precipitates, while ...

Influence of sapphire pretreatment conditions on crystalline quality of AlN epilayers has been investigated by metal organic chemical vapor deposition (MOCVD). Compared to alumination treatment, it is found that appropriate sapphire nitridation significantly straightens the surface atomic terraces and decreases the X-ray diffraction (0002) full width at half maximum (FWHM) to a minimum of 55 ar...

Here, we report that the postsynthesis nitridation of tungsten oxide nanowires can result in single crystal nitride nanowires when the initial diameters of the nanowires are less than 10 nm. For nanowires with diameters greater than 10 nm, the nitridation of nanowires resulted in polycrystalline but highly oriented tungsten nitride domains in nanowires. Partially nitrided nanowires show an epit...

Cubic boron nitride (cBN) particles coated with 20 wt% nanocrystalline TiN were prepared by coating the surface of cBN particles with TiO2, followed by nitridation with NH3 gas at 900 degrees C. Coating of TiO2 on cBN powders was accomplished by a sol-gel process from a solution of titanium (IV) isopropoxide and anhydrous ethanol. An amorphous TiO(x) layer of 50 nm thickness was homogenously fo...