The preparation and functionalization of ITO surfaces has been studied using primarily X-ray photoemission spectroscopy and infrared reflection-absorption spectroscopy (IRRAS) and the reagents n-hexylamine and n-octyltrimethoxysilane (OTMS). Particular attention has been paid to characterization of the surfaces both before and after functionalization. Surfaces cleaned by ultraviolet (UV)/ozone ...

Analytical electron microscopy techniques are used to investigate elemental distributions across a high-k dielectric stack with a metal gate. Electron energy-loss spectroscopy results from a Si(100)/SiO2/HfO2/TiN/a-Si gate stack confirm the presence of an oxide interfacial phase at the TiN/a-Si interface prior to activation of the stack.

Tin oxide (SnO2) nanofibers are successfully prepared by electrospinning homogeneous viscous solutions of tin acetate in polyvinylpyrrolidone (PVP). The electrospinning is carried out by applying a DC voltage to the tip of a syringe and maintaining the tip to collector distance (TCD), i.e. at DC electric field of 1.25 kV∙cm−1. The electrospun nanofibers are calcined between 550 ̊C and 650 ̊C for ...

We prepared of electrodes that consist of TiO2 with addition of tin-doped indium oxide (ITO) or fluorine-doped tin oxide (FTO) nanoparticles and the application of such electrodes on dye-sensitized solar cell. As compared to TiO2 alone, the addition of ITO and FTO nanoparticles resulted in an efficiency improvement of ~ 20% up to ~ 54% for the TiO2ITO and TiO2-FTO systems, respectively. This im...

A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states distribution as well as the presence of trap states in an organic material. The consequences resulting from the model are exemplarily discussed on the basis of ...

Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 C. The highest field effect mobility was 13 cm/V s with on-to-off ratios of drain current 10–10. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel l...

Tin oxide (SnO2) thin films are widely used by solgel method. One of the most important factors that influence the sensitivities of sensing material is its structural properties especially surface morphology. In this work, we present preparation and characterization of undoped and antimony-doped tin oxide (Sb: SnO2) thin film nanostructures for gas sensing applications. The films were character...

Atomic layer deposition (ALD) of tin oxide (SnO2) thin films was achieved using a cyclic amide of Sn(II) (1,3-bis(1,1-dimethylethyl)4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene) as a tin precursor and nitric oxide (NO) as an oxidant gas. Film properties as a function of growth temperature from 130–250 C were studied. Highly conducting SnO2 films were obtained at 200–250 Cwith the growt...

M.K.M. ALI , K. IBRAHIM , OSAMA S HAMAD , M.H. EISA , M.G. FARAJ , and F. AZHARI 1 School of Physics, University Sains Malaysia, Penang 11800, Malaysia Department of Physics, College of Science, Sudan University of Science and Technology, Khartoum 11113, Sudan School of Electrical and Electronic Engineering, University Sains Malaysia, Penang 11800, Malaysia E-mail: [email protected], kamarul@...