نتایج جستجو برای: tunnel field effect transistor

تعداد نتایج: 2369470  

Journal: :Silicon 2021

In this work, the performance of heterojunction L-Tunnel Field Effect Transistor (LTFET) has been analyzed with different engineering techniques such as bandgap engineering, pocket work-function and gate dielectric respectively. The electrical characteristics device investigated by using Synopsys Sentaurus TCAD tool compared some recent other TFETs. in terms DC well AC analysis offers ON-state ...

Journal: :ECS Journal of Solid State Science and Technology 2021

We proposed a scheme of armchair graphene nanoribbon (AGNR) based tunnel field-effect transistor (TFET). The simulated device consists two electrodes with zigzag termination that are separated by narrow gap. Fermi level is controlled common back gate. main idea on taking advantage the electronic effects smooth edge atoms and investigatinge effect applied small uniaxial tensile strain gate volta...

Journal: :Electrochemical science advances 2022

Abstract Field‐effect transistors have strong applications in biosensing field from pH and glucose monitoring to genomics, proteomics, cell signaling assays, biomedical diagnostics general. Notable advantages are the high sensitivity (thanks intrinsic amplification), quick response (useful for real‐time monitoring), suitability miniaturization, compact portable read‐out systems. The initial con...

2013
V. D. Ta R. Chen D. M. Nguyen H. D. Sun

Related Articles Bihydrogel particles as free-standing mechanical pH microsensors Appl. Phys. Lett. 102, 031901 (2013) Tunnel-field-effect-transistor based gas-sensor: Introducing gas detection with a quantum-mechanical transducer Appl. Phys. Lett. 102, 023110 (2013) Interface states in metal-insulator-semiconductor Pt-GaN diode hydrogen sensors J. Appl. Phys. 113, 026104 (2013) An experimental...

Journal: :Science and technology of advanced materials 2012
Takeo Ohno Yutaka Oyama

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer ...

2000
D. M. Schaadt E. T. Yu A. E. Berkowitz

Structures in which magnetic and electronic materials are combined offer a variety of possibilities for realization of devices with improvement functionality or performance compared to conventional devices. We have designed, characterized, and analyzed a novel hybrid magnetoelectronic device: a monolithic field-effect-transistor-amplified magnetic field sensor in which a granular tunnel magneto...

Journal: :international journal of nanoscience and nanotechnology(ijnn 0
s. sam daliri technical engineering department, university of mohaghegh ardabili, ardabil, iran j. javidan faculty of technical engineering department, university of mohaghegh ardabili, ardabil, iran a. bozorgmehr nano technology and quantum computing lab, shahid beheshti university, gc, tehran, iran

multiplier is one of the important components in many systems such as digital filters, digital processors and data encryption. improving the speed and area of multipliers have impact on the performance of larger arithmetic circuits that are part of them. wallace algorithm is one of the most famous architectures that uses a tree of half adders and full adders to increase the speed and reduce the...

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