نتایج جستجو برای: tunneling

تعداد نتایج: 22160  

Journal: :Physical review. E, Statistical, nonlinear, and soft matter physics 2006
Valery S Shchesnovich Solange B Cavalcanti Jandir M Hickmann Yuri S Kivshar

We discuss the interband light tunneling in a two-dimensional periodic photonic structure, as studied recently in experiments for optically induced photonic lattices [Trompeter, Phys. Rev. Lett. 96, 053903 (2006)]. We identify the Zener tunneling regime at the crossing of two Bloch bands, which occurs in the generic case of a Bragg reflection when the Bloch index crosses the edge of the irreduc...

Journal: :Physical review letters 2005
S Sasaki T Fujisawa T Hayashi Y Hirayama

Spin relaxation from a triplet excited state to a singlet ground state in a semiconductor quantum dot is studied by employing an electrical pump-and-probe method. Spin relaxation occurs via co-tunneling when the tunneling rate is relatively large, confirmed by a characteristic square dependence of the relaxation rate on the tunneling rate. When co-tunneling is suppressed by reducing the tunneli...

Journal: :Physical review letters 2002
Daniel A Steck Windell H Oskay Mark G Raizen

We study quantum dynamical tunneling between two symmetry-related islands of stability in the phase space of a classically chaotic system. The setting for these experiments is the motion of carefully prepared samples of cesium atoms in an amplitude-modulated standing wave of light. We examine the dependence of the tunneling dynamics on the system parameters and indicate how the observed feature...

1999
H. B. Chan R. C. Ashoori L. N. Pfeiffer K. W. West

We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most noninteger filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (n 1, 3, and 1 3) tunneling occurs at two distinct rates that differ by up to 2 orders of magnit...

1996
Li Hua Yu

Applying a technique developed recently [1,2] for an harmonic oscillator coupled to a bath of harmonic oscillators, we present an exact solution for the tunneling problem in an Ohmic dissipative system with inverted harmonic potential. The result shows that while the dissipation tends to suppress the tunneling, the Brownian motion tends to enhance the tunneling. Whether the tunneling rate incre...

2008
E. H. Hwang

We calculate the collective charge density excitation dispersion and spectral weight in bilayer semiconductor structures including effects of interlayer tunneling. The out-of-phase plasmon mode (the “acoustic” plasmon) develops a long wavelength gap in the presence of tunneling with the gap being proportional to the square root (linear power) of the tunneling amplitude in the weak (strong) tunn...

2015
Xiaodong Yan Wenjun Li S. M. Islam Kasra Pourang Huili Xing Patrick Fay Debdeep Jena

By the insertion of thin InxGa1!xN layers into Nitrogen-polar GaN p-n junctions, polarizationinduced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium ...

Journal: :Physical review letters 2000
N Lorente M Persson

We have carried out a density functional study of vibrationally inelastic tunneling in the scanning tunneling microscope of acetylene on copper. Our approach is based on a many-body generalization of the Tersoff-Hamann theory. We explain why only the carbon-hydrogen stretch modes are observed in terms of inelastic and elastic contributions to the tunneling conductance. The inelastic tunneling i...

2012
Jer-Chyi Wang Chih-Ting Lin Chia-Hsin Chen

In this study, Gd2O3 nanocrystal (Gd2O3-NC) memories with nanostructure tunneling layers are fabricated to examine their performance. A higher programming speed for Gd2O3-NC memories with nanostructure tunneling layers is obtained when compared with that of memories using a single tunneling layer. A longer data retention (< 15% charge loss after 104 s) is also observed. This is due to the incre...

2002
S. A. GURVITZ

We consider tunneling to the continuum in a multi-dimensional potential. It is demonstrate that this problem can be treated as two separate problems: a) a bound state and b) a non-resonance scattering problem, by a proper splitting of the potential into two components. Finally we obtain the resonance energy and the partial tunneling widths in terms of the bound and the scattering state wave fun...

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