The recent surge in the demand for low power portable wireless electronics that can offer extremely high data rates has resulted in much active research in Ultra-Wideband (UWB) systems. UWB is widely recognized as a promising technology for high data rate, short-range applications with precise time resolution and high energy efficiency. All these benefits originate from the wideband characteris...

This paper describes cryogenic broadband amplifier with very low noise for the frequency band 1.5-4.5 GHz. At 15 K the twostage InP-based amplifier has a gain of 28+/-2 dB dB and a noise temperature below 5 K. For a narrower band of 2-4 GHz at 15 K the measured gain is 30.0+/-0.8 dB and noise temperature is 1.5 K. The total DC power consumption of the amplifier is 6.8 mW. A lattice matched stru...

An Ultra Wide Band CMOS Low Noise Amplifier (LNA) design is presented in this paper. Due to low power consumption and extremely high data rates the UWB system is bound to be popular in the end user market. The LNA is the first stage after antenna in an UWB transceiver. The LNA is accountable for providing enough gain to the signal with the bare minimum distortion. In this work we have designed ...

A low power and low noise front end chopped instrumentation amplifier for portable electrocardiogram recording system is presented. The circuit is based on the chopper technique which is implemented using folded cascode structure that has significant lower power consumption than the predecessor’s approaches while keeping the performance unchanged. The chopper switches modulate noise from a low ...

This work presents and analyses the design of a multi-mode Low Noise Amplifier (LNA) dedicated to 2.4 GHz Wireless Sensor Network (WSN) applications. The proposed inductorless LNA, implemented in 28 nm FDSOI CMOS technology, is based on common-gate configuration imbedded with common-source stage boost overall transconductance circuit. LNA specifically designed, optimized, address three modes op...

An ultra-wideband low noise amplifier for cognitive radio applications covering 50 MHz to 10 GHz is designed in a 65-nm CMOS technology. A three-stage dc-coupled common source amplifier with RC degeneration at the last stage optimizes the gain, linearity and output gain-phase balancing. Throughout the covered band, the simulated voltage gain is >23.3 dB whereas the noise figure is <3.4 dB. The ...

Department of Physics and Electronics, University of Science-VNU Hochiminh City, Vietnam; Faculty of Electrical and Electronics Engineering, University of Technology, VNU Hochiminh City, Vietnam; Department of Electrical and Computer Engineering, University of Saskatchewan, Saskatoon, Canada Corresponding Author: Nhan Nguyen ______________________________________________________________________...