The OPA643 provides a level of speed and dynamic range previously unattainable in a monolithic op amp. Using a de-compensated voltage feedback architecture with two internal gain stages, the OPA643 achieves exceptionally low harmonic distortion over a wide frequency range. The "classic" differential input provides all the familiar benefits of precision op amps, such as bias current cancellation...

The PSRR of a linear regulator is determined by three factors: 1. The PSRR of the bandgap voltage reference, whose output ripple affects the output ripple of the linear regulator up to the roll-off frequency of the bandgap. 2. The open-loop gain of the feedback loop (AV), which is roughly equal to the open-loop gain of the error amplifier, up to the 0dB (unity gain) crossover frequency of the l...

AbstractThis paper deals with the design and analysis of folded cascode operational transconductance amplifier in different regions of operations: strong, weak and moderate inversion region. The folded cascode OTA consists of cascode OTA and cascode gain boosting technique. By using 0.35μm technology, the simulation shows DC gain of 78.42dB with a unity gain bandwidth of 446.07 MHz and power co...

This paper presented a method for the design of a high frequency CMOS operational amplifier. The OPAMP is designed using tsmc 0.18 micron CMOS technology which operates at 2.5V power supply. This is a two stage CMOS OPAMP which employs a miller capacitor. To design a two stage OPAMP is a multi-dimensional optimization problem where optimization of one or more parameters may easily result into d...

In this paper, a low Power, Gain Boosted Recycling Folded Cascode Operational Transconductance Amplifier (GB-RFC OTA) is described. The proposed GB-RFC OTA is designed using 130nm CMOS technology and achieves enhanced gain, unity gain bandwidth and slew rate with the low Power budget. The proposed circuit operates on 1V supply voltage and 200 μA bias current and consumes a power of 798μW.The GB...

A high-performance CMOS unity-gain current amplifier is proposed. The solution adopts two feedback loops to reduce the input resistance and a nested-Miller technique to provide frequency compensation. A design example using a 0.8 mm process and a 2V supply is given and SPICE simulations show a bandwidth of 75MHz, no slew-rate limitations and a settling time better than 50 ns, irrespective of th...

This report describes the design of a two-stage broadband low-noise-amplifier (LNA) for the frequency range from 3 GHz to 9 GHz, using GaAs MESFETs with an ft of 20 GHz. The passive components were implemented with microstrips. In the frequency band of operation, the achieved noise figure (NF) is within 0.5 dB from the minimum NF of a single transistor, the power gain is 15 dB, flat within 1 dB...

Abstract We present a selective laterally wet etched collector InP/InGaAs/InGaAsP double heterojunction bipolar transistor (DHBT) with a quaternary step graded base collector structure. This device shows a DC current gain of = 70 over a large collector current range, a breakdown voltage of BVCE0 = 10.5 V, and a maximal collector emitter voltage of more than 5.5 V at 105 A/cm2 collector current ...

In this paper, we applied self-aligned T-gate design to aligned carbon nanotube array transistors and achieved an extrinsic current-gain cutoff frequency (ft) of 25 GHz, which is the best on-chip performance for nanotube radio frequency (RF) transistors reported to date. Meanwhile, an intrinsic current-gain cutoff frequency up to 102 GHz is obtained, comparable to the best value reported for na...

The most important metrics for the high-frequency and high-power performance of microwave transistors are the cut-off frequency fT , and the Johnson figure of merit FoMJohnson. We have simulated a state-of-the-art, high-frequency and high-power GaN HEMT using our full band Cellular Monte Carlo (CMC) simulator, in order to study the RF performance and compare different methods to obtain such met...