A simple thermal oxidation-etching process was developed to translate vertical silicon nanowire arrays into silica nanotube arrays. The obtained nanotubes perfectly retain the orientation of original silicon nanowire arrays. The inner tube diameter ranges from 10 to 200 nm. High-temperature oxidation produces relative thick, rigid, and pinhole-free walls that are made of condensed silica. This ...

This article reports the development of (a) vertical and (b) lateral diamond vacuum field emission devices with excellent field emission characteristics. These diamond field emission devices, diode and triode, were fabricated using a self-aligning gate formation technique from silicon-on-insulator wafers using conventional siliconmicropatterning and etching techniques. High emission current N0....

A radio frequency plasma enhanced chemical vapor deposition system was used for the successful growth of thin vertical carbon nanowalls, also known as vertical graphene, on various substrates. Transmission electron microscopy studies confirmed the presence of vertical graphene walls, which are tapered, typically consisting of 10 layers at the base tapering off to 2 or 3 layers at the top. The s...

This paper describes the fabrication of large arrays (10(6) units in 1 cm(2)) of 100 µm tall, single-crystal silicon columns with submicron tip cross-sections. The columns are formed using thin film deposition and growth, reactive ion etching, and deep reactive ion etching. The columns can be either slightly tapered or have pencil-like morphology with nanoscaled tip diameter (41 nm). Conformal ...

Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10(13) ions cm(- 2) has been determined to be the threshold value for achieving observable etching resis...

This paper reviews recent work in the area of silicon photonic devices and circuits for monolithic and heterogeneous integration of circuits and systems on a chip. In this context, it presents fabrication results for producing low-loss silicon waveguides without etching. Resonators and add-drop distributed filters utilizing sidewall modulation fabricated in a single lithography and etching step...

Ultrafine organic nanowire arrays (ONWAs) with a controlled direction were successfully fabricated by a novel one-step Faraday cage assisted plasma etching method. The mechanism of formation of nanowire arrays is proposed; the obliquity and aspect ratio can be accurately controlled from approximately 0° to 90° via adjusting the angle of the sample and the etching time, respectively. In addition...

In the present work, a new structure of vertical cavity surface emitting laser (VCSEL) is designed and simulated. In this structure, InGaAsP is used as the active region which is sandwiched between GaAs/AlGaAs distributed bragg mirror at the top of structure and GaAs/AlAs distributed bragg mirror at the bottom. In this work, the hole etching depth was continued down to the top of lower spacer l...

Macroporous silicon has been etched from n-type Si, using a vertical etching cell where no rear side contact on the silicon wafer is necessary. The resulting macropores have been characterised by means of Scanning Electron Microscopy (SEM). After etching, SiO2 was thermally grown on the top of the porous silicon as an insulating layer and Si3N4 was deposited by means of Low Pressure Chemical Va...

A complete investigation of holographic photonic crystal structures has been conducted. From both theoretical and experimental results, profiles of resultant patterns under different process conditions can be estimated and controlled. The use of antireflection layers is crucial for realizing submicron photonic crystals with good uniformity over a large area. We successfully realize submicron-sc...