The main wideband amplifier candidates for use in submarine systems are hybrid DRA/EDFA and C+L band EDFAs. We explore the relative merits of the two technologies and demonstrate through simulations that the hybrid approach is advantageous for most systems. Introduction Submarine systems have enjoyed the tremendous advances in coherent transmission brought about by high speed DSP technology ove...

Instrumentation for ultrasonic velocity and attenuation measurements in liquids and solids is described. 5 MHz pulse generator is assembled using CMOS integrated circuits (4011, 7414, 74121, and 4010), having pulse width 2 microseconds to 60 microseconds. The wideband receiver is developed using Wideband Low Distortion, High Gain Operational Amplifier (OPA 643). The gain and bandwidth of the re...

In the present paper, disc loaded interaction structure for potential application in wideband Gyro-TWT amplifier has been analyzed, taking all the space and modal harmonics into consideration, for the eigenwave solutions. The analysis has been restricted to azimuthally symmetric TE0,n mode. Dispersion characteristics have been plotted by varying the structure parameters and have been validated ...

This paper presents the design of a 2-16 GHz ultra wide band low noise amplifier (UWB LNA). The proposed LNA has a gain of 11.5 ± 0.85 dB with NF less than 2.82 dB. Good input and output impedance matching, good isolation and linearity are achieved over the operating frequency band. The proposed UWB LNA consumes 18.14 mW of power from 1.8V supply. This UWB LNA is designed and simulated in 0.18 ...

This paper gives a comparative analysis of an inductorless Complementary Metal Oxide Semiconductor (CMOS) Single-ended current-mode Transimpedance Amplifier (TIA) intended for use in front-end Optical communication for wideband operation. This technique uses N similar TIAs in parallel configuration to boost the overall bandwidth as well as the transimpedance gain which is not possible with volt...

An ultra-wideband low noise amplifier for cognitive radio applications covering 50 MHz to 10 GHz is designed in a 65-nm CMOS technology. A three-stage dc-coupled common source amplifier with RC degeneration at the last stage optimizes the gain, linearity and output gain-phase balancing. Throughout the covered band, the simulated voltage gain is >23.3 dB whereas the noise figure is <3.4 dB. The ...

The basic active and passive elements for a 50 nm InGaAs-InAlAs-InP HEMT process with pseudomorphic InGaAs channel have been realized. The design and fabrication of 50 nm gate length InP HEMTs, MIM capacitors and thin film resistors have been studied. The integration of the components in a microstrip-based MMIC process has been proven by the successful demonstration of a wideband amplifier.

The need for high speed, wideband amplifiers is the driving force behind the development of the Current Feedback Amplifier (CFA). The CFA has significant advantages over conventional amplifiers in terms of slew rate performance and inherently wide bandwidth. This paper provides a review of the theory and design of current feedback amplifiers.

Introduction This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays. Detailed design procedures, using these transistor arrays, for a matched (800MHz to 2500MHz) high-gain low-noise amplifier and a 10MHz to 600MHz wideband feedback amplifier are described. The HFA3046, HFA3096, HFA3127, HFA3128 transistor arrays are fabricated in a ...

We are developing a 95 GHz, 200 W, wideband vacuum electronic amplifier based on a 20 kV, 120 mA electron beam. The serpentine circuit is fabricated by multilayer UV-LIGA using an embedded polymer monofilament, which produces an all-copper monolithic structure with beam tunnel. We also discuss extension of the technique to upper millimeter-wave circuits at 670 GHz.