The mechanism of forming-free bipolar resistive switching in a Zr/CeOx/Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrOy layer at the Zr/CeOx interface. X-ray diffraction studies of CeOx films revealed that they consist of nano-polycrystals embedded in a disordered lattice. The observed resi...

Metal-oxide-based resistive switching memory device has been studied intensively due to its potential to satisfy the requirements of next-generation memory devices. Active research has been done on the materials and device structures of resistive switching memory devices that meet the requirements of high density, fast switching speed, and reliable data storage. In this study, resistive switchi...

Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as...

In the first week of the internship, I was tasked with creating a VerilogA model of memristors I could use for further simulations. As there is no single predominant model, I explored the range of models used in published works and implemented several in VerilogA. All these models are in the RRAM library, and they all have a name with the prefix memr_model. Below is an explanation of each model...

ZnO nanowires with a diameter of 70 nm and nanorods with a diameter in the range of 100-150 nm and two micrometer in length were grown on glass substrates by resistive evaporation method and applying a two step oxidation process at low temperatures, without using any catalyst, template or buffer layer. XRD pattern of these nanostructures indicated a good crystallinity property with wurtzite hex...

Abstract To improve the resolution of electromagnetic inversion for thin layers, one-dimensional was studied. The smooth conductivity model produced by Occam's cannot accurately represent information subterranean resistive leading to erroneous findings. existing layers’ method sets constraint term at layers 0, resulting in abrupt changes resistivity values. Given above problems, we proposed an ...

Free-boundary 3D tokamak equilibria and resistive wall instabilities are calculated using a new resistive wall model in the two-fluid M3D-C1 code. In this model, the resistive wall and surrounding vacuum region are included within the computational domain. This implementation contrasts with the method typically used in fluid codes in which the resistive wall is treated as a boundary condition o...

High-yield production of few-layer graphene flakes from graphite is important for the scalable synthesis and industrial application of graphene. However, high-yield exfoliation of graphite to form graphene sheets without using any oxidation process or super-strong acid is challenging. Here we demonstrate a solution route inspired by the lithium rechargeable battery for the high-yield (>70%) exf...

We have studied the formation of a resistive region in the capillary during DNA separation. This effect is caused by an unequal change in the mobilities of cations and anions at the interface between the running buffer solution and the capillary. We studied the motion of the resistive region boundary by sequential removal of portions of the affected capillary end. We found that in the process o...

We demonstrate the fabrication of solution-processed MoOx-treated (s-MoOx) silver nanowire (AgNW) transparent conductive electrodes (TCEs) utilizing low-temperature (sub-100 °C) processes. The s-MoOx aggregates around the AgNW and forms gauze-like MoOx thin films between the mesh, which can effectively lower the sheet resistance by more than two orders of magnitude. Notably, these s-MoOx-treate...