The six-degree equations of flight in their classic form do not provide a proper physical perception due to a number of interferences. Nor do they render visible the important role of attack angles. In this study, attempts have been made to develop a complete set of 3D acceleration equations from the equations of normal and tangential acceleration αN=vωv, αt=v ̇. For this purpose, a coordinate s...

Rehabiliating Bushehr historic fabric and paying to it as an important urban fabric through increasing capabilities and facilities is main concern. Bushehr historical fabric can be the consequence of several factors the most important of which is the Persian Gulf and its past history as a national one. This fabric, is organic, dense, compact, having its own characteristics. One of its main prio...

The six-degree equations of flight in their classic form do not provide a proper physical perception due to a number of interferences. Nor do they render visible the important role of attack angles. In this study, attempts have been made to develop a complete set of 3D acceleration equations from the equations of normal and tangential acceleration αN=vωv, αt=v ̇. For this purpose, a coordinate s...

We report results of the analytical and numerical investigation of self-heating effects in GaN-based high-power field-effect transistors. The problem of heat transfer in a transistor structure has been solved both analytically, using the method of images, and numerically. Two-dimensional electrothermal simulations of the GaN metal-semiconductor field-effect transistors on SiC and sapphire subst...

Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional (2-D) electrostatic effects are small (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to Natori’s theory of the ballistic MOSFET. The model also treats 2-D electrostatics and the quant...

An analytical surface-potential-based drain current model for amorphous indium–gallium–zinc–oxide (a-InGaZnO) thin film transistors (TFTs) is proposed by introducing an effective charge density approach in this paper. This gives two initial approximate values of the state and thermal voltage using dominant free total density, then obtains a high-precision one-exponent equivalent transformation ...