The heterostructured configuration between two-dimensional (2D) semiconductor materials has enabled the engineering of the band gap and the design of novel devices. So far, the synthesis of single-component topological insulator (TI) 2D materials such as Bi2Se3, Bi2Te3, and Sb2Te3 has been achieved through vapor phase growth and molecular beam epitaxy; however, the spatial controlled fabricatio...

Dirac-like topological insulators have attracted strong interest in optoelectronic application because of their unusual and startling properties. Here we report for the first time that the pure topological insulator Bi2Te3 exhibited a naturally ultrasensitive nonlinear absorption response to photoexcitation. The Bi2Te3 sheets with lateral size up to a few micrometers showed extremely low satura...

In present-day high-performance electronic components, the generated heat loads result in unacceptably high junction temperatures and reduced component lifetimes. Thermoelectric modules can, in principle, enhance heat removal and reduce the temperatures of such electronic devices. However, state-of-the-art bulk thermoelectric modules have a maximum cooling flux qmax of only about 10 W cm(-2), w...

Articles you may be interested in Calculation of room temperature conductivity and mobility in tin-based topological insulator nanoribbons Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition Appl.

We report on the observation of complex superlattices at the surface of the topological insulator Bi2Te3. Scanning tunneling microscopy reveals the existence of two different periodic structures in addition to the Bi2Te3 atomic lattice, which is found to strongly affect the local electronic structure. These three different periodicities are interpreted to result from a single small in-plane rot...

Hall-effect (HE) sensors based on high-quality Mn-doped Bi2Te3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi2Te3. The sensors with low Mn concentrations, MnxBi2-xTe3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Ha...

In this work, the mechanical exfoliation method has been utilized to fabricate Bi2Te3 ultrathin films. The thickness of the ultrathin films is revealed to be several tens of nanometers. Weak antilocalization effects and Shubnikov de Haas oscillations have been observed in the magneto-transport measurements on individual films with different thickness, and the two-dimensional surface conduction ...

We report the fabrication and characterization of segmented element power generator modules of 254 thermoelectric elements. The element is 1 mm × 1 mm in area, which consists of 300 μm thickness Bi2Te3 and 50 μm thickness ErAs:(InGaAs)1-x(InAlAs)x, so that each segment can work at different temperature ranges. Erbium arsenide metallic nanoparticles are incorporated to create scattering centers ...

Submitted for the MAR11 Meeting of The American Physical Society Phase diagram of thermoelectric Bi2S3-Bi2Se3-Bi2Te3 system WEISHU LIU, QINYONG ZHANG, QIAN ZHANG, Boston College, BO YU, GANG CHEN, ZHIFENG REN, Boston College, BOSTON COLLEGE TEAM, MIT TEAM — It is well known that the highest ZT value, at an optimized carrier concentration, is mainly determined by a material parameter β = μ(m*/m0...