The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic, and sensor applications. So far the operation of bilayer graphene-based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this...

We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to...

The electronic and optical properties of monolayer and bilayer graphene are investigated to verify the effects of interlayer interactions and external magnetic field. Monolayer graphene exhibits linear bands in the low-energy region. Then the interlayer interactions in bilayers change these bands into two pairs of parabolic bands, where the lower pair is slightly overlapped and the occupied sta...

Scaling graphene down to nanoribbons is a promising route for the implementation of this material into devices. Quantum confinement of charge carriers in such nanostructures, combined with the electric field-induced break of symmetry in AB-stacked bilayer graphene, leads to a band gap wider than that obtained solely by this symmetry breaking. Consequently, the possibility of fabricating AB-stac...

Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric field; however, the resistance does not diverge even at low temperatures. The observed temperature dependence of the conductance consists of two contributions: the thermally activated (TA) conduction and the variable rang...

We herein investigate the interaction of beryllium with a graphene sheet and in a bilayer of graphite by means of periodic DFT calculations. In all cases, we find the beryllium atoms to be more weakly bonded on graphene than in the bilayer. Be2 forms both magnetic and non-magnetic structures on graphene depending on the geometrical configuration of adsorption. We find the stability of the Be/bi...

Y. Murata,1 S. Nie,2 A. Ebnonnasir,3 E. Starodub,2 B. B. Kappes,3 K. F. McCarty,2 C. V. Ciobanu,3,* and S. Kodambaka1,† 1Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, USA 2Sandia National Laboratories, Livermore, California 94550, USA 3Department of Mechanical Engineering and Materials Science Program, Colorado School of Mi...

Low-frequency 1/f noise is ubiquitous and dominates the signal-to-noise performance in nanodevices. Here we investigate the noise characteristics of single-layer and bilayer graphene nanodevices and uncover an unexpected 1/f noise behavior for bilayer devices. Graphene is a single layer of graphite, where carbon atoms form a two-dimensional (2D) honeycomb lattice. Despite the similar compositio...

We report on an experimental measurement of Coulomb drag in a double quantum well structure consisting of bilayer-bilayer graphene, separated by few layer hexagonal boron nitride. At low temperatures and intermediate densities, a novel negative drag response with an inverse sign is observed, distinct from the momentum and energy drag mechanisms previously reported in double monolayer graphene. ...