Molecular-beam epitaxy grown InAs site-controlled quantum dots SCQDs have been demonstrated on GaAs substrates patterned with a dense array of 100 nm square nanopores in 200 nm pitch by soft photocurable nanoimprint lithography. The effects of different growth parameters, including GaAs buffer-layer thickness and arsenic overpressure, on SCQD formation are investigated. The buffer-layer thickne...

We apply neutron reflectivity to probe the internal structure of spin-assisted layer-by-layer (SA-LbL) films composed of electrostatically assembled polyelectrolytes. We find that the level of stratification and the degree of layer intermixing can be controlled by varying the type and concentration of salt during SA-LbL assembly. We observe well-defined layer structure in SA-LbL films when depo...

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire su...

ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition. High-resolution x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and I-V measurements were carried out to characterize structural, electrical, and optical properties. After introducing a 60-nm-thick AlN buffer layer, the growth direction ...

In this work we present the preparation and characterization of cerium doped lanthanum zirconate (LCZO) films and non-stoichiometric lanthanum zirconate (LZO) buffer layers on metallic Ni-5% W substrates using chemical solution deposition (CSD), starting from aqueous precursor solutions. La₂Zr₂O₇ films doped with varying percentages of Ce at constant La concentration (La0.5CexZr1-xOy) were prep...

In this paper we present high performance dynamically allocated multi-queue (DAMQ) buffer schemes for fault tolerance systems on chip applications that require an interconnection network. Two virtual channels shared the same buffer space. Fault tolerant mechanisms for interconnection networks are becoming a critical design issue for large massively parallel computers. It is also important to hi...

Planar superstrate CuInS2 (CIS) solar cell devices are fabricated using totally solution-processed deposition methods. A titanium dioxide blocking layer and an In2S3 buffer layer are deposited by the spray pyrolysis method. A CIS2 absorber layer is deposited by the spin coating method using CIS ink prepared by a 1-butylamine solvent-based solution at room temperature. To obtain optimum annealin...