نتایج جستجو برای: c face
تعداد نتایج: 1209140 فیلتر نتایج به سال:
The planar molecules of 6-hydroxy-1,3-benzoxathiol-2-one, C(7)H(4)O(3)S, are linked by extensive O-H.O and C-H.O hydrogen bonding and are further stablilized by face-to-face pi-pi interactions.
We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as...
The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high-frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial g...
FACE is an object–oriented, self-descripting data model with first-class types. FACE can be used to model software, e.g. object–oriented frameworks. We explore techniques and mechanisms to implement the reflective FACE data model in the statically typed, object–oriented language C++. Some comparison of FACE with other meta level approaches like MetaObject Protocols or Open Implementations is do...
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