نتایج جستجو برای: channel thickness

تعداد نتایج: 330602  

One of the most popular forming processes is the shape rolling process in which the desired shape change is achieved by pressing two rollers with a special shape in the opposite rotational direction. In order to improve the product’s quality and reduce production costs, accurate analysis of the shape rolling process of the compressor blades as well as the investigation of the effective paramete...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه رازی - پژوهشکده فنی و مهندسی 1388

asymmetric polyethersulfone (pes) microfiltration flat sheet membranes were composed by the phase inversion method (pim) and were used as supports. composite membranes were fabricated by coating silicone rubber as selective layer. effect of different concentrations of pes and pdms and different solvent such as nmp, dmf and dms effects as pes solvents and support thickness and different coagulat...

1999
L. SRINIVASA

A rigid-plastic Cosserat model has been used to study dense, fully developed flow of granular materials through a vertical channel. Frictional models based on the classical continuum do not predict the occurrence of shear layers, at variance with experimental observations. This feature has been attributed to the absence of a material length scale in their constitutive equations. The present mod...

2001
Tzu-Ming Liu Hsu-Hao Chang Shi-Wei Chu Chi-Kuang Sun

We demonstrate a method to manage the locked multichannel output from a mode-locked Cr:forsterite laser cavity, which was achieved by inserting a Fabry–Perot etalon into the oscillator. It is found that the thickness of the etalon determines the channel spacing and its surface reflectivity affects channel linewidth and channel pulsewidth. Following Fabry–Perot theory, we can use these facts to ...

A. Omidvar F. Khalvati

In this paper, a novel analytical method was developed based on statistical energy analysis framework to evaluate sound transmission loss through ventilated windows. The proposed method was compared to numerical and analytical models available in the literature. Results showed the success and advantage of the proposed model in predicting the acoustic performance of the ventilated window and the...

2012
Jacopo Franco Ben Kaczer Philippe J. Roussel Jérôme Mitard Moonju Cho Liesbeth Witters Tibor Grasser

We report extensive experimental results of the negative bias temperature instability (NBTI) reliability of SiGe channel pMOSFETs as a function of the main gate-stack parameters. The results clearly show that this high-mobility channel technology offers significantly improved NBTI robustness compared with Si-channel devices, which can solve the reliability issue for sub-1-nm equivalent-oxide-th...

2017
Tsung-Chia Chen Jiang-Cheng Lin Rong-Mao Lee

The stainless steel bipolar plate has received much attention due to the cost of graphite bipolar plates. Since the micro-channel of bipolar plates plays the role of fuel flow field, electric connector and fuel sealing, an investigation of the deep drawing process for stainless steel micro-channel arrays is reported in this work. The updated Lagrangian formulation, degenerated shell finite elem...

2006
METIN MURADOGLU HOWARD A. STONE

We study the motion of large bubbles in curved channels both semi-analytically using the lubrication approximation and computationally using a finite-volume/fronttracking method. The steady film thickness is governed by the classical Landau– Levich–Derjaguin–Bretherton (LLDB) equation in the low-capillary-number limit but with the boundary conditions modified to account for the channel curvatur...

Journal: :IEEE Trans. on CAD of Integrated Circuits and Systems 1988
Masaaki Tomizawa Kiyoyuki Yokoyama Akira Yoshii

An application of fuli Monte Carlo modeling to quarter-micron Si MOSFETs is given Nonstationary carrier transport is shown to dominate in 0.4 pm or less channel devices, with peak velocities exceeding I X lo7 cm/sec. The calculated results agree well with experimental values for a device with 0.15 pm channel length and 2.5 nm gate oxide thickness.

2015
Jonathan Rivnay Pierre Leleux Marc Ferro Michele Sessolo Adam Williamson Dimitrios A. Koutsouras Dion Khodagholy Marc Ramuz Xenofon Strakosas Roisin M. Owens Christian Benar Jean-Michel Badier Christophe Bernard George G. Malliaras

UNLABELLED Despite recent interest in organic electrochemical transistors (OECTs), sparked by their straightforward fabrication and high performance, the fundamental mechanism behind their operation remains largely unexplored. OECTs use an electrolyte in direct contact with a polymer channel as part of their device structure. Hence, they offer facile integration with biological milieux and are ...

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