In the Spallation Neutron Source (SNS) ring, multi-turn injection is employed to obtain a large transverse beam size which significantly reduces the space-charge tune shift of the accumulated beam. Careful choice of the painting scheme and bump function is required to obtain the desired beam profile together with low beam loss. In this paper we examine, both analytically and numerically, the ef...

We analyze the extracellular stimulation current and charge injection capacity (CIC) of microelectrodes coated with an insulating layer to prevent toxic electrochemical effects in bioelectronic applications. show for a microelectrode ferroelectric that polarization contributes current. Depending on remanent Pr ferroelectric, switching regime can increase CIC by up two orders magnitude as compar...

We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs) prior to active polymer deposition. By using the SAM to engineer the effective Au work function, we markedly affect the charge injection process. We systematica...

The injection line and main ring lattice designs for the University of Maryland Electron Ring [1] have been studied numerically. Possible injection systems were designed using a fitting algorithm based on a set of generalized rms-envelope equations that include the effects of space charge and beam momentum dispersion. The beam dynamics of the injection into and through the periodical ring struc...

Abstract-Silicon, the main material of microelectronics, is perfectly suited for spin-driven applications. All-electrical spin injection in silicon has been demonstrated, however, the magnitude of the corresponding signal is larger than theoretically predicted. We analyze the influence of electrostatic charge screening on the efficiency of spin injection at the ferromagnet-semiconductor interfa...