نتایج جستجو برای: cmos technology
تعداد نتایج: 480075 فیلتر نتایج به سال:
This paper presents an ultrafast CMOS flash A/D converter design and performance. Although the featured A/D converter is designed in CMOS, the performance is compatible to that of GaAs technology currently available. To achieve high-speed in CMOS, the featured A/D converter utilizes the Threshold Inverter Quantization (TIQ) technique. A 6-bit TIQ based flash A/D converter was designed with the ...
Continued advances in silicon technology have enabled the VLSI industry to shrink the area of the transistor by roughly a factor of two with each successive technology node. This trend has continued unabated for the past five decades and has made personal computing devices ubiquitous in modern culture. Made possible by continuous advances in CMOS technology and fueled by a growing and fiercely ...
−A 3-Transistor cell CMOS OTP ROM array using standard CMOS antifuse (AF) based on permanent breakdown of MOSFET gate oxide is proposed, fabricated and characterized. The proposed 3-T OTP cell for ROM array is composed of an nMOS AF, a high voltage (HV) blocking nMOS, and cell access transistor, all compatible with standard CMOS technology. The experimental results show that the proposed struct...
CMOS switches are one of the main components of today's analog circuits. Among the many types of non-idealities that can affect the performance of the switch, its leakage current is of utmost importance. In order to reduce the leakage current or equally increase the OFF resistance of any switch, a novel technique is presented in this paper. The proposed technique employs the body effect to incr...
DNA sequencers based on nanopore sensors present an opportunity for a significant break from the template-based incumbents of the last forty years. Key advantages ushered by nanopore technology include a simplified chemistry and the ability to interface to CMOS technology. The latter opportunity offers substantial promise for improvement in sequencing speed, size and cost. This paper reviews ex...
Silicon transistors have undergone rapid miniaturization in the past several decades. Recently reported CMOS devices have dimensional scales approaching the “nano-transistor” regime. This paper discusses performance characteristics of a MOSFET device with 15 nm physical gate length. In addition, aspects of a non-planar CMOS technology that bridges the gap between traditional CMOS and the nano-t...
This paper reports a low-cost, high-sensitivity CMOS-MEMS piezoresistive accelerometer with large proof mass. In the device fabricated using ON Semiconductor 0.5 μm CMOS technology, an inherent CMOS polysilicon thin film is utilized as the piezoresistive sensing material. A full Wheatstone bridge was constructed through easy wiring allowed by the three metal layers in the 0.5 μm CMOS technology...
The upcoming trend in VLSI technology has led to the miniaturization of semiconductor devices which in turn is strongly dependent on the advancement in the CMOS technology. The present technology is below sub-100 nm in channel length which is the minimum dimension of single device. As CMOS technology dimensions are being intrusively scaled down to the fundamental limits such as reduction in car...
A survey of industry trends from the last two decades of scaling for CMOS logic is examined in an attempt to extrapolate practical directions for CMOS technology as lithography progresses toward the point at which CMOS is limited by the size of the silicon atom itself. Some possible directions for various specialized applications in CMOS logic are explored, and it is further conjectured that do...
Evolution of microelectronics towards miniaturization is one of the main motivations for Nanotechnology. CMOS Technology has been targeted to integrate more and more Devices per unit area of Silicon-substrate, but there is limitation in scaling-down CMOS Circuits/Devices. Like Nanotechnology, QCA (Quantum-Dot Cellular Automata) is another alternate Technology having ability to reduce the Device...
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