نتایج جستجو برای: contact layer
تعداد نتایج: 436878 فیلتر نتایج به سال:
The metal-insulator-semiconductor (MIS) diode is the most useful device in the study of semiconductor surfaces. The current-voltage data of the metal-insulatorsemiconductor Schottky diode are simulated using thermionic emission diffusion equation taking into account the interfacial layer parameters. The calculated current–voltage data are fitted into ideal thermionic emission diffusion equation...
Based on three-dimensional (3D) general solutions for one-dimensional (1D) hexagonal piezoelectric quasicrystals (PEQCs), this paper studied the frictional contact problem of 1D PEQCs layer. The frequency response functions layer are analytically derived by applying double Fourier integral transforms to and boundary conditions, which consequently converted corresponding influence coefficients. ...
An ultrathin AlOx layer has been deposited onto a CH3NH3PbI3 film using atomic layer deposition technology, to construct a metal-insulator-semiconductor (MIS) back contact for the hole-transporting material-free perovskite solar cell. By optimization of the ALD deposition cycles, the average power conversion efficiency (PCE) of the cell has been enhanced from 8.61% to 10.07% with a highest PCE ...
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