نتایج جستجو برای: digit international standard of industrial classification isic during 1995

تعداد نتایج: 21391402  

2007
T. E. Wilkes José Y. Pastor Javier LLorca K. T. Faber

Biomorphic silicon carbide stands as a new class of materials fabricated by reactive infiltration of molten silicon in carbonaceous preforms obtained from wood pyrolysis [1]. The basic material is a Si/SiC composite, in which the SiC forms a skeleton that replicates the wood microstructure and the unreacted Si fills the pores. Silicon can be removed from the composite creating a highly porous S...

2015
Guanghan Qian Saadah Abdul Rahman Boon Tong Goh

Ni-catalyzed Si-based heterostructure nanowires grown on crystal Si substrates by hot-wire chemical vapor deposition (HWCVD) were studied. The nanowires which included NiSi nanowires, NiSi/Si core-shell nanowires, and NiSi/SiC core-shell nanowires were grown by varying the filament temperature T f from 1150 to 1850 °C. At a T f of 1450 °C, the heterostructure nanowires were formed by crystallin...

2014
Leif I. Johansson Rickard Armiento Jose Avila Chao Xia Stephan Lorcy Igor A. Abrikosov Maria C. Asensio Chariya Virojanadara

Only a single linearly dispersing π-band cone, characteristic of monolayer graphene, has so far been observed in Angle Resolved Photoemission (ARPES) experiments on multilayer graphene grown on C-face SiC. A rotational disorder that effectively decouples adjacent layers has been suggested to explain this. However, the coexistence of μm-sized grains of single and multilayer graphene with differe...

2015
Han Byul Jin Youngeun Jeon Sungchul Jung Vijayakumar Modepalli Hyun Suk Kang Byung Cheol Lee Jae-Hyeon Ko Hyung-Joon Shin Jung-Woo Yoo Sung Youb Kim Soon-Yong Kwon Daejin Eom Kibog Park

The crystallinity of epitaxial graphene (EG) grown on a Hexagonal-SiC substrate is found to be enhanced greatly by capping the substrate with a molybdenum plate (Mo-plate) during vacuum annealing. The crystallinity enhancement of EG layer grown with Mo-plate capping is confirmed by the significant change of measured Raman spectra, compared to the spectra for no capping. Mo-plate capping is cons...

2017
Subrina Rafique Lu Han Jaesung Lee Xu-Qian Zheng Christian A. Zorman Philip X.-L. Feng Hongping Zhao

2011
Jisheng Han

To form a memory cell, it is essential to epitaxially grow high quality pnp stack 3C SiC on Si. It requires a SiC seed, p type, n-type and p type 3C-SiC to be realized. The distributions of the elements in the film will be largely decided by the processes performed for the different purposes. To verify the distribution of the elements with depth, SIMS can be a sensitive and informative techniqu...

Journal: :Journal of the American Chemical Society 2008
Ossama Assad Sreenivasa Reddy Puniredd Thomas Stelzner Silke Christiansen Hossam Haick

We report on Si NWs modified by covalent scaffolds, via SiC bonds, that give nearly full coverage of the Si atop sites and, at the same time, provide a route for subsequent functionalization. The obtained CH(3)CHCHSi NWs exhibit superior oxidation resistance over Si NWs that are modified with CH(3) or CH(3)CC functionalities, which give nearly full coverage of the Si atop site too.

Journal: :CoRR 2017
Rafael Teixeira Sousa Larissa Vasconcellos de Moraes

This paper describes the participation of Araguaia Medical Vision Lab at the International Skin Imaging Collaboration 2017 Skin Lesion Challenge. We describe the use of deep convolutional neural networks in attempt to classify images of Melanoma and Seborrheic Keratosis lesions. With use of finetuned GoogleNet and AlexNet we attained results of 0.950 and 0.846 AUC on Seborrheic Keratosis and Me...

ژورنال: :فصلنامه علمی - پژوهشی مدلسازی اقتصادی 2014
رضا یوسفی حاجی آباد فرهاد خداداد کاشی

هدف این مقاله، بررسیارتباط عملکرد صنایع کارخانه ای با سطح تمرکز بازار و نوآوری در بخش صنعت ایران است. برای این منظور داده های فصلی صنایع کارخانه ای ایران، بر اساس طبقه بندی استاندارد بین المللی فعالیت های صنعتی (isic)،[1] جمع آوری و با استفاده از الگوی خود رگرسیون برداری با داده های ترکیبی یا پنل دیتا (pvar)،[2] ارتباط میان عملکرد رشته فعالیت های مختلف صنعتی با سطح تمرکز بازار و نوآوری، طی سال ...

Journal: :Optics express 2012
Shota Yamada Bong-Shik Song Jeremy Upham Takashi Asano Yoshinori Tanaka Susumu Noda

We show that a SiC photonic crystal cannot only inhibit two photon absorption completely, but also suppress higher-order multiple photon absorption significantly at telecommunication wavelengths, compared to conventional Si-based photonic crystal nanocavities. Resonant spectra of a SiC nanocavity maintain a Lorentzian profile even at input energies 100 times higher than what can be applied to a...

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