نتایج جستجو برای: digit international standard of industrial classification isic during 1995
تعداد نتایج: 21391402 فیلتر نتایج به سال:
Biomorphic silicon carbide stands as a new class of materials fabricated by reactive infiltration of molten silicon in carbonaceous preforms obtained from wood pyrolysis [1]. The basic material is a Si/SiC composite, in which the SiC forms a skeleton that replicates the wood microstructure and the unreacted Si fills the pores. Silicon can be removed from the composite creating a highly porous S...
Ni-catalyzed Si-based heterostructure nanowires grown on crystal Si substrates by hot-wire chemical vapor deposition (HWCVD) were studied. The nanowires which included NiSi nanowires, NiSi/Si core-shell nanowires, and NiSi/SiC core-shell nanowires were grown by varying the filament temperature T f from 1150 to 1850 °C. At a T f of 1450 °C, the heterostructure nanowires were formed by crystallin...
Only a single linearly dispersing π-band cone, characteristic of monolayer graphene, has so far been observed in Angle Resolved Photoemission (ARPES) experiments on multilayer graphene grown on C-face SiC. A rotational disorder that effectively decouples adjacent layers has been suggested to explain this. However, the coexistence of μm-sized grains of single and multilayer graphene with differe...
The crystallinity of epitaxial graphene (EG) grown on a Hexagonal-SiC substrate is found to be enhanced greatly by capping the substrate with a molybdenum plate (Mo-plate) during vacuum annealing. The crystallinity enhancement of EG layer grown with Mo-plate capping is confirmed by the significant change of measured Raman spectra, compared to the spectra for no capping. Mo-plate capping is cons...
To form a memory cell, it is essential to epitaxially grow high quality pnp stack 3C SiC on Si. It requires a SiC seed, p type, n-type and p type 3C-SiC to be realized. The distributions of the elements in the film will be largely decided by the processes performed for the different purposes. To verify the distribution of the elements with depth, SIMS can be a sensitive and informative techniqu...
We report on Si NWs modified by covalent scaffolds, via SiC bonds, that give nearly full coverage of the Si atop sites and, at the same time, provide a route for subsequent functionalization. The obtained CH(3)CHCHSi NWs exhibit superior oxidation resistance over Si NWs that are modified with CH(3) or CH(3)CC functionalities, which give nearly full coverage of the Si atop site too.
This paper describes the participation of Araguaia Medical Vision Lab at the International Skin Imaging Collaboration 2017 Skin Lesion Challenge. We describe the use of deep convolutional neural networks in attempt to classify images of Melanoma and Seborrheic Keratosis lesions. With use of finetuned GoogleNet and AlexNet we attained results of 0.950 and 0.846 AUC on Seborrheic Keratosis and Me...
هدف این مقاله، بررسیارتباط عملکرد صنایع کارخانه ای با سطح تمرکز بازار و نوآوری در بخش صنعت ایران است. برای این منظور داده های فصلی صنایع کارخانه ای ایران، بر اساس طبقه بندی استاندارد بین المللی فعالیت های صنعتی (isic)،[1] جمع آوری و با استفاده از الگوی خود رگرسیون برداری با داده های ترکیبی یا پنل دیتا (pvar)،[2] ارتباط میان عملکرد رشته فعالیت های مختلف صنعتی با سطح تمرکز بازار و نوآوری، طی سال ...
Suppression of multiple photon absorption in a SiC photonic crystal nanocavity operating at 1.55 μm.
We show that a SiC photonic crystal cannot only inhibit two photon absorption completely, but also suppress higher-order multiple photon absorption significantly at telecommunication wavelengths, compared to conventional Si-based photonic crystal nanocavities. Resonant spectra of a SiC nanocavity maintain a Lorentzian profile even at input energies 100 times higher than what can be applied to a...
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