This paper presents two highly integrated receiver circuits fabricated in InP heterojunction bipolar transistor (HBT) technology operating at up to 2.5 and 7.5 Gb/s, respectively. The first IC is a generic digital receiver circuit with CMOS-compatible outputs. It integrates monolithically an automatic-gain-control amplifier, a digital clock and data recovery circuit, and a 1 : 8 demultiplexer, ...

This paper describes a new approach to amplify optical images by using optically pumped doped cores in a multi-core optical fiber structure. This approach combines the high gain and high efficiency properties of cladding pumped optical amplifiers with the imaging properties of coherent fiber bundles. The individual cores correspond to the pixels in the image amplifier. We have demonstrated 3x3 ...

We present our research on the high energy picosecond laser operating at a repetition rate of 1 kHz and the high average power picosecond laser running at 100 kHz based on bulk Nd-doped crystals. With diode-pumped solid state (DPSS) hybrid amplifiers consisting of a picosecond oscillator, a regenerative amplifier, end-pumped single-pass amplifiers, and a side-pumped amplifier, an output energy ...

This paper deals with the design of low power low noise neural signal amplifier for Epileptic Seizure Prediction. The advent of Micro-electro Arrays has driven the need for implantable electronic circuitry to detect those Extracellular neural signals (ENG). We proposed a preamplifier of fully differential Low Noise Amplifier (LNA) with gm boosting in order to enhance the gain as well as reduce ...

Tunable dual-wavelength operation of a diode laser system based on a tapered diode amplifier with double-Littrow external-cavity feedback is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. An output power of 1.54 W is achieved with a frequency difference of 0.86 THz, the output power i...

The purpose of this report is to place in proper perspective the role that the modern semiconductor diode lownoise amplifier and converter have in the amplification of extremely small signals. There is a discussion of the fundamental principles of parametric amplification, and a quantitive treatment which is valid in the limit of very high Q diodes. Design formulas from the literature are given...

We demonstrate a high-power Nd: YVO 4 picosecond laser amplifier that is capable of generating 51.5 W average output power at wavelength 1,064 nm, with repetition rate 70 MHz and pulse duration 8.5 ps. This system encompasses three stages diode end-pumped amplification including two double-pass amplifiers single-pass amplifier. Laser near-diffraction-limited beam quality ( M 2 < 1.1) was...