The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contra...

Optical Amplifiers are essentials components in long haul fibre optic system. An amplifier is a electronic device that can increase the power of signal. An Optical Amplifier is effectively the opposite of attenuator while Optical Amplifiers provide gain and attenuator provides loss. When a signal travels in a optical fibre medium the signal suffer from various losses such as fibre losses, atten...

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compati...

In this thesis, we study all-optical processing techniques based on non-linear semiconductor optical amplifiers for the functionalities of second and third generation optical networks. In particular, devices for all-optical wavelength conversion with regenerative properties have been investigated. The configurations under investigation are based on the non-linear four-wave mixing process which ...

We propose and demonstrate a cost-effective half- duplex transceiver for Fiber-to-the-Room (FTTR) network by using homemade uncooled isolator-free distributed feedback (DFB) laser as both receiver (Rx) transmitter (Tx). AlGaInAs multiple quantum wells (MQWs) partially corrugated grating are utilized operation of the DFB lasers. Tx/Rx mode switching is implemented specially designed complementar...

The characteristics of a semiconductor laser operating in the threshold region are investigated systematically. In this transition region from below to above threshold, the linewidth versus injection current characteristic is found to be nonmonotonic: a local minimum of linewidth just below threshold and a local maximum just above threshold are confirmed experimentally. If a semiconductor laser...

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi-continuous-wave regime at 80 MHz as well as under long-pulse pho...