GaAsPN semiconductors are promising material for the development of high-efficiency tandem solar cells on silicon substrates. GaAsPN diluted-nitride alloy is studied as the top-junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. The GaP/Si interface is also studied in order to obtai...

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% i...

The paper reports on the effects of a proton irradiation campaign on a series of thin-film silicon solar cells (singleand double-junction). The effect of subsequent thermal annealing on solar cells degraded by proton irradiation is investigated. A low-temperature annealing behaviour can be observed (at temperatures around 100 to 160 C) for microcrystalline silicon solar cells. To further explor...

In this paper describes a simple model for tunnel junction (GaAs) between the top cell (GaAs) and bottom cell (Ge) of cascade solar cells. We theoretically studied the electrical characteristics (IV) of GaAs tunnel diode with the accounting program MATLAB for doping concentration of the junction after Using this model between two cascaded solar cell (GaAs / Ge) and we calculate the electrical c...

An electroluminescence microscopy combined with a spectroscopy was developed to visually analyze multi-junction solar cells. Triple-junction solar cells with different conversion efficiencies were characterized by using this system. The results showed that the mechanical damages and material defects in solar cells can be clearly distinguished, indicating a high-resolution imaging. The external ...

A new theoretical model to calculate the effective surface recombination velocity ($a) of a high-low junction with an arbitrary impurity distribution is presented. The model is applied to erfc-diffused pp+ junctions using experimental data of bandgap narrowing, lifetime and mobility. Bandgap narrowing is shown to degrade the minority carrier reflecting properties of the high-low junction. Compu...