نتایج جستجو برای: drain conditions

تعداد نتایج: 857504  

2010
Marian K. Kazimierczuk Dakshina Murthy-Bellur

This paper presents the derivations of the voltage transfer functions of the amplifier A, the feedback network β, and the loop gain T of the common-drain (CD) Colpitts oscillator, using the small-signal model of the CD Colpitts oscillator. The derivation of the characteristic equation of the CD Colpitts oscillator is presented. Using the characteristic equation, the equation for the oscillation...

Journal: :Advanced Research in Gastroenterology & Hepatology 2017

2016
Sharon Brownie Elizabeth Oywer

This paper highlights the extent of the brain drain in relation to human resources for health (HRH) that is currently challenging Kenya, and suggests strategies that have the potential to change current working environments and improve HRH retention rates. Governments in partnership with health professional bodies and regulators could improve the working conditions for psychiatrists and mental ...

Journal: :Microelectronics Reliability 2011
E. A. Douglas C. Y. Chang D. J. Cheney B. P. Gila C. F. Lo Liu Lu M. R. Holzworth P. G. Whiting K. S. Jones G. D. Via Jinhyung Kim Soohwan Jang Fan Ren Stephen J. Pearton

AlGaN/GaN High Electron Mobility Transistors (HEMTs) with various gate lengths have been stepstressed under both onand off-state conditions. On-state, high power stress tests were performed on 0.17 lm gate length HEMTs and a single 5 lm spaced TLM pattern. Significant degradation of the submicron HEMTs as compared to the excellent stability of the TLM patterns under the same stress conditions r...

2014
Haedong Jang Andrew Zai Tibault Reveyrand Patrick Roblin Zoya Popovic David E. Root

Static X-parameter (XP) models for RF power amplifiers (PAs), derived from both simulations and nonlinear vector network analyzer (NVNA) measurements, are investigated for the prediction of PA performance under dynamic signal conditions such as in envelope tracking (ET). The instantaneous AM-AM, AM-PM and PAE predictions of XP models extracted from simulation are compared under ET dynamic signa...

2016
J. Verdier Olivier Llopis J. Dienot Robert Plana Jacques Graffeuil

A complete electrical characterization of different types of GaAs field effect transistors at liquid nitrogen temperature is performed. The trapping-detrapping mechanisms on deep levels are particularly adressed and a method is proposed to circumvent the collapse phenomenom which otherwise limits the electrical performances. From these measurements a HEMT non-linear model is extracted and is fo...

In this study, the effects of diameter and location of drain pipe in uplift force and exit hydraulic gradient in the foundation of gravity dams are investigated. For this purpose, a numerical model of gravity dam foundation is simulated using finite elements method. The results indicate that drain pipe under the gravity dam reduces the uplift force and exit hydraulic gradient. Location of the d...

Journal: :Spine 2016
Tsuyoshi Yamada Toshitaka Yoshii Satoru Egawa Ryohei Takada Takashi Hirai Hiroyuki Inose Tsuyoshi Kato Tetsuya Jinno Atsushi Okawa

STUDY DESIGN A retrospective observational study. OBJECTIVE We evaluated the prognostic value of drain tip culture performed for surgical site infection (SSI) after spinal surgery with a large number of subjects, and investigated whether the type of surgery or timing of drain removal correlated with positive drain culture and SSI rates. SUMMARY OF BACKGROUND DATA In many institutions, routi...

2016
R. Gayathri

In present scenario high voltage AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si substrate with Schottky drain contacts were simulated to increase the breakdown voltage by replacing the conventional Ohmic drain contacts. A significant increase in breakdown voltage values was achieved for nonannealed Schottky contacts by elimination of metal spikes underneath drain electrodes. The bre...

Journal: :تحقیقات اقتصادی 0
حشمت اله عسگری گروه اقتصاد دانشگاه ایلام مهدی تقوی دانشکده اقتصاد دانشگاه علامه طباطبایی

recently, economists have attention to the brain drain as emigration of skilled and educated labor force from developing countries. in this case, we are dealing with one main question is: how brain drain can affect the human capital of source countries? based on existing theories, brain drain can affect the economy of source countries in different ways such as; direct reduction of human capital...

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