نتایج جستجو برای: effect transistor cnfet

تعداد نتایج: 1654298  

Journal: :international journal of nano dimension 0
r. abband pashaki department of electrical engineering, guilan science and research branch, islamic azad university, guilan, iran. s. a. sedigh ziabari department of electrical engineering, roudbar branch, islamic azad university, roudbar, iran.

in this paper, the temperature dependence of some characteristics of cylindrical gate-all-around si nanowire field effect transistor (gaa-si-nwfet) is investigated to representing the temperature nano-sensor structures and improving their performance. firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of gaa-si-nwfet to propose the temperatu...

2014
Gargi khanna

In this paper review study on different types of Junctionless transistor is promoted. Here a comparative study of SOI, bulk planar, double gate and tunnel Junctionless field effect transistor. It is observed Junctionless transistor exhibits better short channel effects and ON current then inversion mode device. Tunnel Junctionless transistor exhibits the properties of both tunnel FET and Juncti...

In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead to reduced power consumption and smaller activ...

2012
Stefan Schaur Philipp Stadler Beatriz Meana-Esteban Helmut Neugebauer N. Serdar Sariciftci

By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed on a pentacene based transistor exhibits a reversible p-doping response. This doped state is evok...

2014

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

Journal: :IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 2018

2014

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه یزد 1387

چکیده ندارد.

Journal: :international journal of nanoscience and nanotechnology(ijnn 0
s. sam daliri technical engineering department, university of mohaghegh ardabili, ardabil, iran j. javidan faculty of technical engineering department, university of mohaghegh ardabili, ardabil, iran a. bozorgmehr nano technology and quantum computing lab, shahid beheshti university, gc, tehran, iran

multiplier is one of the important components in many systems such as digital filters, digital processors and data encryption. improving the speed and area of multipliers have impact on the performance of larger arithmetic circuits that are part of them. wallace algorithm is one of the most famous architectures that uses a tree of half adders and full adders to increase the speed and reduce the...

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